Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

Her, Jim-Long; Chen, Fa-Hsyang; Chen, Ching-Hung; Pan, Tung-Ming

doi:10.1039/c4ra15538f

Cited by 21 publications

(12 citation statements)

References 32 publications

(25 reference statements)

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“…2e ). Consequently, the vertical currents are not caused by any severe leakage path of the insulator film, and the electrode-limited conduction mechanisms like a quantum tunneling effect of charge carriers is almost impossible because the thickness of the SiO 2 insulator is 200 nm 19 – 23 . Instead, it can be reasonably inferred that the electrons are injected and transported through inherent trap centers that randomly exist in the SiO 2 layer because the vertical current starts to flow near 0 V without a strong external electric field and flows more stably as the junction size increases.…”

Section: Resultsmentioning

confidence: 99%

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Lee

Yoon

Lim

et al. 2018

Sci Rep

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The technology for electrical current passing through an insulator thin-film between two electrodes is newly getting spotlights for substantial potentials toward advanced functional devices including a diode and a resistive switching device. However, depending on an electrode-limited conduction mechanisms of the conventional devices, a narrow processing window for a thickness of the insulator thin-film and an inability to control a magnitude and direction of the currents are challenges to overcome. Herein, we report a new approach to enable electrical charge carriers to pass stably through a relatively-thick insulator layer and to control a magnitude and polarity of the currents by applying an oxide semiconductor electrode in a metal/insulator/metal structure. We reveal that the electrical conduction in our devices follows a space charge-limited conduction mechanism which mainly depends on the charge carriers injected from contacts. Therefore, characteristics of the current including a current value and a rectification ratio of input signal are precisely controlled by electrical properties of the oxide semiconductor electrode. The unique current characteristics in metal/insulator/oxide semiconductor structures give extendable inspirations in electronic materials science, even a prominent solution for various technology areas of electronics.

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Section: Resultsmentioning

confidence: 99%

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Lee

Yoon

Lim

et al. 2018

Sci Rep

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“…Most reported FGOTM was based on conventional planar architecture with micrometer channel lengths and rigid substrate, which severely limited their driving ability, operating speed, and application in flexible electronics . In the conventional planar FGOTM, the performance of the FGOTM was often limited by two intrinsic factors: the organic semiconductor materials and planar device structure.…”

Section: Introductionmentioning

confidence: 99%

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Wang

Chen

et al. 2017

Adv Funct Materials

107

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Flexible floating-gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics.

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“…Various charge trapping media such as noble metals, viz., Ag, Au, and Pt 8-10 and dielectrics, viz., Si 3 N 4 , Al 2 O 3 , Sm 2 O 3 , and SmTiO 3 are explored. 11,12 Such nanocomponents of these memory transistors play an important role in enhancing the device performance in terms of hysteresis window and retention time. Recently, Liu et al utilized directional silver nanowire (AgNW) to improve TFT performance.…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

Kumar

Jeong

2017

RSC Adv.

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Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm₂O₃ and SmTiO₃ charge trapping layers

Abstract: In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

Cited by 21 publications

References 32 publications

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

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