Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

Kumar, Manoj; Jeong, Hakyung

doi:10.1039/c7ra03460a

Cited by 8 publications

(6 citation statements)

References 19 publications

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“…HfO bonds even at a relatively low temperature (170°C) compared to other techniques [34][35]. The cyclic measurements for Seebeck coefficients at low T, on the other hand, remained constant for all samples throughout the temperature range, as shown in Fig.…”

Section: Effect Of Doping Element On the Thermoelectric Performancementioning

confidence: 67%

“…However, the high bond dissociation energy can also suggest that Hf–O bonds are more difficult to form and are likely of lower concentration compared to Ti–O. In any case, the layer-by-layer self-limiting growth by ALD could likely have helped in forming Hf–O bonds even at a relatively low temperature (170 °C) compared to other techniques. , The cyclic measurements for Seebeck coefficients at low T, on the other hand, remained constant for all samples throughout the temperature range, as shown in Figure S4.…”

Section: Resultsmentioning

confidence: 92%

“…According to previous literature, this high electrical stability was attributed to the suppression of oxygen-related defects caused by Hf. 27,28 Oxygen-bond breaking can lead to the formation of interstitial oxygen, an acceptor defect that likely reduces free- 34,35 The cyclic measurements for Seebeck coefficients at low T, on the other hand, remained constant for all samples throughout the temperature range, as shown in Figure S4.…”

Section: Resultsmentioning

confidence: 94%

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Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Felizco

Juntunen

Uenuma

et al. 2020

ACS Appl. Mater. Interfaces

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Herein, enhancements in thermoelectric performance, both power factor and thermal stability, are exhibited by sandwiching HfO 2 and TiO 2 layers onto atomic layer deposited ZnO thin films. High temperature thermoelectric measurements from 300 to 450 K revealed an almost two-fold improvement in electrical conductivity for TiO 2 /ZnO (TZO) samples, primarily owing to increase in carrier concentration by Ti doping. On the other hand, HfO 2 /ZnO (HZO) achieved the highest power factor values owing to maintaining Seebeck coefficients comparable to pure ZnO. HZO also exhibited excellent stability after multiple thermal cycles, which has not been previously observed for pure or doped ZnO thin films. Such improvement in both thermoelectric properties and thermal stability of HZO can be attributed to a shift in crystalline orientation from a-axis to c-axis, as well as the high bond dissociation energy of HfO, stabilizing the ZnO structure. These unique properties exhibited by ALD HZO and TZO thin films pave the way for next generation transparent thermoelectric devices.

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Section: Effect Of Doping Element On the Thermoelectric Performancementioning

confidence: 67%

Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 94%

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Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Felizco

Juntunen

Uenuma

et al. 2020

ACS Appl. Mater. Interfaces

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“…The fabrication process of AgNWs can be found elsewhere [19]. AgNWs were synthesized by heating of ethylene glycol (100 ml) at 155 °C for 1 h under continuous mechanical stirring.…”

Section: Methodsmentioning

confidence: 99%

Solution-processed undoped and Indium doped ZnO thin film transistors: role of Ag nanowires into InZnO channel layer

Kumar

Jeong

2019

Semicond. Sci. Technol.

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We report solution-processed undoped ZnO, 1 at% In doped ZnO (IZO) and 1 at% Ag nanowires (AgNWs) embedded IZO thin film transistors (TFTs). The mobility of prepared TFTs was enhanced compared to undoped ZnO, and AgNWs embedded IZO TFT exhibited excellent electrical performances with high field-effect mobility of 38.17 cm 2 V −1 s −1 and high on/off current ratio on the order of 10 7 . The energy dispersive x-ray (EDX) elemental mapping and x-ray photon spectroscopy (XPS) analysis demonstrated that the Ag particles are diffused into IZO thin film from AgNWs, suggesting that AgNWs played dual role in the channel layer which served as an acceptor charge carrier and a conductive path for charge carriers. SEM images showed that IZO film had increased grain size in comparison to undoped ZnO film and that AgNWs were well interconnected IZO film. The increment in the grain size in the IZO film and well connected AgNWs in the IZO films lead to enhanced mobility of the TFTs.

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“…Over the past decade, transparent oxide semiconductor materials have been extensively studied for applications in various fields such as photodetectors, thin film transistors (TFTs), nonvolatile memory based on TFTs, light emitting diodes and solar cells devices [1][2][3][4][5][6]. In the recent past, solution-processed metal oxide semiconductors have emerged as promising candidates for application in large-area optoelectronics, particularly in thin film transistors as an active layer, owing to their high carrier mobility and excellent chemical stability [7].…”

Section: Introductionmentioning

confidence: 99%

A solution-processed yttrium-doped ZnO thin film transistors with sol-gel derived yttrium oxide gate dielectric layer

Kumar¹,

Jeong²

2018

Semicond. Sci. Technol.

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Yttrium-doped ZnO (YZO) thin film transistors (TFTs) are fabricated on sol-gel derived yttrium oxide (Y 2 O 3 ) dielectric layers by solution process. The sol-gel derived Y 2 O 3 layer annealed at 300 °C showed a leakage current density of less than 10 −6 A cm −2 at 10 V. Increasing the annealing temperature led to a decrease in the leakage current density by more than two orders of magnitude. The Y 2 O 3 dielectrics annealed at 300 °C exhibited crystalline phase, smooth surface and a high dielectric constant. The YZO TFTs built on a sol-gel derived Y 2 O 3 layer showed charge carrier mobility of 6.19 to 27.10 cm 2 V −1 s −1 upon annealing of YZO at 350 to 500 °C. The chemical composition was determined by x-ray photoelectron spectroscopy to confirm the doping of Y in the ZnO at all annealing temperatures. The results reveal the potential of Y 2 O 3 dielectric for developing low-temperature and high-performance electronic devices.

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Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

Abstract: Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Cited by 8 publications

References 19 publications

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Solution-processed undoped and Indium doped ZnO thin film transistors: role of Ag nanowires into InZnO channel layer

A solution-processed yttrium-doped ZnO thin film transistors with sol-gel derived yttrium oxide gate dielectric layer

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Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

Abstract: Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Cited by 8 publications

References 19 publications

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films

Solution-processed undoped and Indium doped ZnO thin film transistors: role of Ag nanowires into InZnO channel layer

A solution-processed yttrium-doped ZnO thin film transistors with sol-gel derived yttrium oxide gate dielectric layer

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Product

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Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films