Flexible floating-gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics.

Optical memory based on a vertical organic field effect transistor with ultrashort channel length exhibits excellent device performance with distinct storage levels.

In this work, a novel vertical quantum-dot light-emitting transistor (VQLET) based on a vertical organic thin-film transistor is successfully fabricated. Benefiting from the new vertical architecture, the VQLET is able to afford an extremely high current density, which allows most of the organic thin film transistors (OTFT) even with low mobility (for instance, poly­(3-hexylthiophene)) to drive a quantum-dot light-emitting diode (QLED), which was previously unavailable. Moreover, the hole injection barrier could be modulated by the additional gate electrode, which precisely optimizes the charge balance in the device, a critical issue in QLED, resulting in the precise control of current density and brightness of the VQLET. The VQLET shows a high performance with a maximum current efficiency of 37 cd/A. Furthermore, integrating OTFT and QLED into a single device, the VQLET features drastic advantages by realizing active matrix quantum-dot light-emitting diodes (AMQLEDs), which significantly reduces the number of transistors and frees the large area fraction occupied by transistors. Hence, these results indicate that the VQLET provides a new strategy for realizing a low-cost, solution-processed, high-performance OTFT-AMQLED for the flat panel display technology. Moreover, the novel design offers a unique method to exquisitely control the charge balance and maximize the efficiency the QLED.

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We developed AM miniLED local dimming (LD) backlight systems on glass for 75‐inch LCD displays, with each consisting of 5184 localing dimming zones. The 75‐inch display achieves a high dynamic contrast ratio of 1,000,000 : 1 and high brightness of more than 1000nits. This backlight system grants the LCD display with HDR performance, which is comparable to those of other products (Dual‐cells and OLEDs), by making the dark state real black. In addition, the system exhibits advantages such as low fabrication cost and long life time.

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High Dynamic Contrast as an very important element of high‐end TV market for display, has received extensive attention in the past years. Here, we proposed an AM MiniLED local dimming backlight technology for 75‐inch LCD 8K displays, witch consist of 5184 local dimming zones and can realize area dimming. Compared with the traditional LCD dsplays with a contrast ratio of about 5000 : 1, the 75‐inch 8K AM MiniLED LCD displays can achieve a high dynamic constrast ratio of 1,000,000 : 1 and over 1000nits brightness. This AM MiniLED backlight technology can individually control the switch of each zone, which can achieve HDR performance and comparable performance with the other technologys (Dual‐cells and OLEDs). By turning off the dark area directly, the dark state can achieve true black. In addition, the AM MiniLED local dimming Backlight technology clearly indicated that the the low energy consumption, low cost and long life time..