Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Moazzami, R.; Hu, Chen; Shepherd, W.H.

doi:10.1109/16.155876

Cited by 268 publications

(77 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The properties of two wellknown perovskite ferroelectrics, Lead Zirconate Titanate (PZT) and Strontium Barium Titanate (SBT), is compared with Si:HfO 2 in Table 1. The recently discovered ferroelectric thin film, Si:HfO 2 [28,6], has a relatively high coercive field that ensures a large memory window [29][30][31][32][33][34][35][36][37][38][39].…”

Section: Ferroelectric Materialsmentioning

confidence: 99%

See 1 more Smart Citation

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Saeidi

Biswas

Ionescu

2016

Solid-State Electronics

View full text Add to dashboard Cite

a b s t r a c tThe implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as ultra-low power nonvolatile memory even in aggressively scaled dimensions. A Fe-TFET analytical model is derived by combining the pseudo 2-D Poisson equation and Maxwell's equation. The model describes the Fe-TFET behavior when a time-dependent voltage is applied to the device with hysteretic output characteristic due to the ferroelectric's dipole switching. The theoretical results provide unique insights into how device geometry and ferroelectric properties affect the Fe-TFET transfer characteristic. The recently explored ferroelectric, silicon-doped HfO 2 is employed as the gate ferroelectric. With the ability to engineer ferroelectricity in HfO 2 thin films, a high-K dielectric well established in memory devices, the silicon-doped HfO 2 opens a new route for improved manufacturability and scalability of future 1-T ferroelectric memories. In the current research, a Si:HfO 2 based Fe-TFET with large memory window and low power dissipation is designed and simulated. Utilizing our presented model, the device characteristics of a Fe-TFET that takes full benefits from Si:HfO 2 is compared with the same devices using well-known perovskite ferroelectrics. Finally, the Fe-TFET is compared with a conventional ferroelectric memory transistor highlighting the advantages of using tunneling memory devices.

show abstract

Section: Ferroelectric Materialsmentioning

confidence: 99%

“…Due to the large number of defects, leakage current, and large lattice mismatch between perovskite ferroelectrics and silicon, it is always necessary to use a buffer layer with a proper interface Table 1 The ferroelectric properties of PZT [29][30][31][32], SBT [33][34][35][36][37][38][39], and Si:HfO 2 [28]. with the substrate.…”

Section: Buffer Layermentioning

confidence: 99%

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Saeidi

Biswas

Ionescu

2016

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…Ferroor piezoelectric materials in thin film format are widely used in non-volatile random-access memory (NVRAM), dynamic random-access memory (DRAM), micro-electro-mechanical systems (MEMS), and other devices. [3][4][5][6][7] For example, applications of high performance piezoelectric MEMS include transducers, actuators, micro-pumps, and inkjet printheads, to mention only a few. [8][9][10][11][12] PZT materials, in particular, have been shown to outperform many other piezoelectrics, which is due in part to the large room-temperature electromechanical coupling factors.…”

Section: Introductionmentioning

confidence: 99%

Ordered Mesoporous Thin Film Ferroelectrics of Biaxially Textured Lead Zirconate Titanate (PZT) by Chemical Solution Deposition

et al. 2014

View full text Add to dashboard Cite

Lead zirconate titanate (PZT) thin film nanostructures with a high degree of biaxial texturing and good ferroelectric properties have been prepared by facile chemical solution deposition on (001)-oriented STO:Nb and LSMO/STO:Nb substrates using a poly(ethylene-co-butylene)-block-poly(ethylene oxide) diblock copolymer as structure-directing agent. The samples were thoroughly characterized by electron microscopy, synchrotron-based grazing incidence smallangle X-ray scattering, X-ray diffraction (including θ-2θ, ω, and φ scans), X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and by ferroelectric polarization switching and fatigue measurements. We show that (1) the cubic mesostructured films with 16 nm diameter pores can be crystallized to produce single phase perovskite PZT with retention of nanoscale order, (2) the sol-gel derived material has an in-plane texture of ~1.9° and an out-ofplane texture of ~1.5°, and (3) the top surface is Zr-rich (the composition in the interior of the films is closer to the targeted composition of PbZr 0.52 Ti 0.48 O 3 ). The coercive field and remanent polarization of approx. 100 nm-thick films derived from dynamic P-E experiments are ~250 kV cm -1 and ~25 μC cm -2 (~7 μC cm -2 after subtracting the non-switching components). Despite the use of Au top electrodes, the nanocrystalline samples show reasonable fatigue performance.All these features render the mesoporous PZT thin films attractive, e.g., for producing straincoupled composite multiferroics.

show abstract

“…Ferroelectric thin films have been widely investigated for their potential applications in nonvolatile random-access memories (NVRAM) and dynamic random-access memories (DRAM) [1] . It is important in these applications that the films have a low coercive field, high remanent polarization, low leakage current and low polarization fatigue [2] .…”

Section: Introductionmentioning

confidence: 99%

Orientation of Bi3.2La0.8Ti3O12 ferroelectric thin films with different annealing schedules

2009

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

View full text Add to dashboard Cite

Fatigue-free Bi 3.2 La 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si (100) substrates using metalorganic solution deposition process. The orientation and formation of 5-layers thin films were studied under different processing conditions using XRD. Experimental results indicate that increase in annealing time at 700 ℃ after preannealing for 10 min at 400 ℃ can remarkably increase (200)-orientation of the films derived from the precursor solutions with two contents of citric acid. Meanwhile, high content of citric acid increases the film thickness and is conducive to the a-orientation of the films with the preannealing, and low concentration of the solution is conducive to the c-orientation of the films without the preannealing.

show abstract

Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Cited by 268 publications

References 20 publications

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Ordered Mesoporous Thin Film Ferroelectrics of Biaxially Textured Lead Zirconate Titanate (PZT) by Chemical Solution Deposition

Orientation of Bi3.2La0.8Ti3O12 ferroelectric thin films with different annealing schedules

Contact Info

Product

Resources

About