High-quality lead-free piezoelectric K 0.5 Na 0.5 Nb 1Àx Mn x O 3Àd (KNNMx, 0 r x r 0.10) films have been successfully deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by a modified sol-gel method. The effects of Mn substitution on the microstructure, morphology, lattice vibrations, and optical and ferroelectric properties of the KNNMx films have been investigated in detail. All films are polycrystalline, crack-free and show a pseudo-cubic (pc) structure with a thickness of about 215 nm. Raman analysis indicates that the characteristic frequency of n 1 , n 5 and n 1 + n 5 modes shifts towards lower wavenumbers with increasing Mn concentration. The optimal ferroelectric properties were obtained in the film doped with x = 0.06, whose remnant polarization (2P r ) and coercive field (2E c ) values at the applied electric field of 1000 kV cm À1 are 51 mC cm À2 and 265 kV cm À1 , respectively. The increased valence of Mn 2+ , which is substituted at the Nb 5+ site as Mn 3+ , plays an important role in reducing the amount of both oxygen vacancies and holes. In addition, the dielectric functions of the KNNMx films have been uniquely extracted by fitting ellipsometric spectra with the Adachi dielectric function model and a four-phase layered model (air/surface rough layer/KNNMx/Pt) in the photon energy range of 1.5-5.5 eV. The optical band gap (E g ) slightly decreases, while the high-frequency dielectric constant (e N ) linearly increases with increasing Mn concentration. Moreover, temperature dependent optical dispersion behavior of the KNNM0.06 film has been investigated from 300 K to 800 K. The analysis of E g and the extinction coefficient (k) reveals the correlation between optical properties and structural phase transition. Furthermore, a distinct in-plane (1801) polar nano-domain pattern with a well-defined rectangular phase hysteresis loop has been observed in the KNNM0.06 film from piezoresponse force microscopy (PFM) experiments. The present results could be crucial for potential multifunctional KNN-based device applications.high Curie temperature (T C B 420 1C), excellent ferroelectric and piezoelectric properties (d 33 B 416 pC N À1 ), as well as good biocompatibility. [5][6][7] Most of the current research on KNN is for bulk ceramics and single crystals. 5,6,8,9 However, there are a few reports on KNN films, which could offer an unexceptional way to build miniaturized devices, such as sensors and micro-electromechanical systems (MEMS). KNN films have been prepared by various methods, such as pulsed laser deposition (PLD), RF-magnetron sputtering and the sol-gel method. 10-12 Among them, the sol-gel method is a well-accepted method due to some evident advantages, such as its chemical homogeneity, ease of stoichiometry control, low-cost and suitability for mass production. 4,13 Unfortunately, the sol-gel derived KNN films show disappointing ferroelectric and piezoelectric properties due to their high leakage current. Many studies have suggested that the oxygen and alkali-ion vacancies in perovskite oxides pla...