A theory is developed and compared with experiment for the growth and etching of silicon in
H2
,
SiCl4
and/or
HC1
mixtures. The horizontal reactor used is operated, as is usual for commercial reactors, under conditions such that the processes are mass‐transport controlled. Good agreement between theory and experiment is found if it is assumed that mass transport occurs predominantly by diffusion.
The doping of epitaxial silicon layers deposited by the hydrogen reduction of
SiCl4
has been studied. The dopants used were phosphorus, arsenic, and antimony introduced as the trichlorides. In each case for fixed dopant to silicon ratios in the gas phase the film resistivity was found to increase with rising temperature and decrease with increasing growth rates. The results are explained by a model which takes into consideration both the transfer and thermodynamic properties of the reactor system. An analysis of the results then leads to values for the activity coefficients for phosphorus, arsenic and antimony in silicon.
It is assumed that autodoping of epitaxial silicon films grown on heavily doped n‐type substrates occurs by transfer of the elemental dopant from the backside of the wafer into the gas phase and subsequently into the depositing film. The processes governing the rate of transfer of autodopant into the film are considered and a quantitative relationship derived for the impurity profile in the film. The relationship gives a satisfactory explanation of autodoping from arsenic doped substrates and shows why antimony is so much to be preferred as a substrate dopant.
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