Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics

Konofaos, N.

doi:10.1016/j.mejo.2004.01.001

Cited by 77 publications

(27 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This discrepancy in BHs can be explained due to an interfacial layer or interfacial states in the semiconductor, the effect of image force lowering, barrier inhomogeneities and nature of measurement system [15,16,[23][24][25][26]. Similar results have been reported in the literature for MS and MIS/MPS types SBDs in dark and illumination condition [28][29][30][31][32].…”

Section: Effects Of Illumination On the C-v And G/ω-v Characteristicssupporting

confidence: 61%

“…According to Demirezen et al [1] Defives et al [21] Ewing et al [22], these two linear regions in the forward bias I-V plots in dark show two distinct barrier heights (BHs) in the parallel. Thus, the relationship between the I and V in dark can be expressed as [1,[23][24][25].…”

Section: Forward and Reverse Bias I-v Characteristicsmentioning

confidence: 99%

“…On the other hand, these high values of n for two regions can be attributed to the high density of N ss localized at M/S interface and the effect of barrier in homogeneity [1,8,11]. Also, the image-force effect, recombination-generation and tunneling may be possible mechanisms that could lead to an ideality factor value greater than unity [19][20][21][22][23][24][25][26]. On the other hand, unless specially fabricated, a SBD possesses a thin interfacial native layer at M/S interface.…”

Section: Forward and Reverse Bias I-v Characteristicsmentioning

confidence: 99%

See 2 more Smart Citations

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

View full text Add to dashboard Cite

In order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (φ b ), series and shunt resistances (R s and R sh ), and the density of interface states/traps (N ss ) are strong functions of illumination level and applied bias voltage. The R s values were determined from the I-V characteristics, by using both Ohm's law. The energy distribution profile of N ss was also obtained from the forward bias I-V characteristics, by taking into account voltage dependent barrier height (φ e ) and ideality factor (n). It was found that Bi-doped PVA layer lead to a considerable decrease in the leakage current, R s and N ss and increase in R sh and rectifier rate (RR=I F /I R ). In conclusion, a thin Bi-doped PVA interfacial layer, considerably improved the diode performance, both in dark and under illumination.account voltage dependent barrier height (φ B (V)) and ideality factor n(V). Experimental results show that the Bi-doped interfacial PVA layer led to considerable decrease in the leakage current, R s and N ss and led to increase in R sh and rectifier rate (RR=I F /I R ). So, it can be said that Bi-doped PVA considerably improved the performance of SBD. Experimental ProcedureFor the fabrication of Au/PVA (Bi-doped)/n-Si (MPS), (phosphor doped) single crystal silicon with surface orientation, 350 μm thickness and 0.7 Ω.cm resistivity was used. Si wafer was degreased in organic solution of peroxide-ammoniac solution in 10 minutes, and then etched in a sequence of H 2 O+HCl solution, and finally quenched in de-ionized water resistivity of 18 MΩ.cm for a prolonged time. Preceding each cleaning step, the wafer was rinsed thoroughly in de-ionized water. Immediately after surface cleaning, high purity (99.999%) gold (Au), with a thickness of ~2000Å, was thermally evaporated onto the whole back side of Si wafer, in a pressure about 10 -6 Torr in high vacuum metal evaporation system. In order to perform a low resistivity ohmic back metal contact, n-Si wafer was sintered at about 450°C for 5 min in N 2 atmosphere.Immediately after the formation of ohmic contact, 0.5 g of bismuth acetate was mixed with 50 g of polyvinyl Alcohol (PVA), molecular Citation: Alialy S, Tecimer H, Uslu H, Altındal Ş (2013) A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA

show abstract

Section: Effects Of Illumination On the C-v And G/ω-v Characteristicssupporting

confidence: 61%

Section: Forward and Reverse Bias I-v Characteristicsmentioning

confidence: 99%

Section: Forward and Reverse Bias I-v Characteristicsmentioning

confidence: 99%

See 1 more Smart Citation

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

View full text Add to dashboard Cite

show abstract

“…The measured capacitance and conductance were corrected for the effect of series resistance using Eqs. (7) and (8) A reliable and fast way to determine the density of interface states (D it ) is the Hill-Coleman method [24], which is confirmed by Konofaos [25] and Dakhel [26]. D it can be obtained according to this method by using the relation…”

Section: Resultsmentioning

confidence: 95%

“…The calculated values of D it are of the order of 10 12 eV −1 cm −2 that is not high enough to pin the Fermi level of the n-Si substrate [25]. The equivalent circuit of the device is shown in Fig.…”

Section: Resultsmentioning

confidence: 98%

Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

et al. 2010

View full text Add to dashboard Cite

Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance (R s ) interface states (D it ) of the junction. Measured capacitance and conductance were corrected for R s . The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of 10 12 cm −2 eV −1 .

show abstract

Illumination effect on I‐V, C‐V and G/w‐V characteristics of AlTiWPd₂Si/nSi structures at room temperature

Uslu

Dökme

Afandiyeva

et al. 2010

Surface & Interface Analysis

View full text Add to dashboard Cite

In this study, the forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Al-TiW-Pd 2 Si/n-Si structures were measured at room temperature. In order to see the illumination effect on main structure parameters such as zero-bias-barrier height ( Bo ), ideality factor (n), series resistance (R s ) of structure and interface states (N ss ), the forward and reverse bias I-V, C-V and G/w-V characteristics of Al-TiW-Pd 2 Si/n-Si structures were investigated in the dark and under various levels of illumination. These main electrical parameters were obtained as function of illumination levels from these measurements. Experimental results show that both the C and G values increase with increasing illumination level due to the illumination-induced interface states. Also, the value of R s decreases with increasing illumination level. The N ss profile was obtained for both forward bias I-V characteristics by taking into account the bias dependent of the ideality factor and effective barrier height ( e ) and low-high frequency method.

show abstract

Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics

Cited by 77 publications

References 16 publications

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

Illumination effect on I‐V, C‐V and G/w‐V characteristics of AlTiWPd₂Si/nSi structures at room temperature

Contact Info

Product

Resources

About

Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics

Cited by 77 publications

References 16 publications

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

Illumination effect on I‐V, C‐V and G/w‐V characteristics of AlTiWPd2Si/nSi structures at room temperature

Contact Info

Product

Resources

About

Illumination effect on I‐V, C‐V and G/w‐V characteristics of AlTiWPd₂Si/nSi structures at room temperature