Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

Abstract

Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance (R s ) interface states (D it ) of the junction. Measured capacitance and conductance were corrected for R s . The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of 10 12 cm −2 eV −1 .

Exploitation of Schottky-Junction-based Sensors for Specifically Detecting ppt-Concentration Gases

“…Increasing the alternating-voltage frequency from 700 up to 5000 Hz, the capacitance tends to reach a saturated value, while a linear reduction exists for the resistance. It is suggested that at a high frequency (i.e., more than 3000 Hz), the interface states along the Schottky junction cannot follow and their contribution to the capacitance turns trivial …”

“…It is suggested that at a high frequency (i.e., more than 3000 Hz), the interface states along the Schottky junction cannot follow and their contribution to the capacitance turns trivial. 26 To eliminate the interferences from the interface states, this work applies the 4500 Hz frequency of alternating voltage as the excitation for collecting reactance signals (X = −1/(2πf C); f: frequency of the alternating voltage). Figure S5 presents the photography of the Bi 2 O 2 Se sensor that is of two interdigitated electrodes, and the conductance channel of exposure is Bi 2 O 2 Se.…”

Interface-state density estimation of n-type nanocrystalline FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

“…The R s and N ss values are vital parameters for the electrical characteristics of the heterojunctions. The Nicollian-Brews method is appropriate to compute the R s value and expressed as [27][28][29]:…”

“…The Hill-Coleman method was employed to compute the N ss value. According to this method, the value of N ss was computed from the measured C-V-f and G-V-f curves by utilizing the following relationship [28,29]:…”

Electrochemical synthesis of p-CuO thin films and development of a p-CuO/n-ZnO heterojunction and its application as a selective gas sensor

“…It appears that at higher frequencies, the interface states cannot follow the AC signal 28 and consequently cannot contribute much to the capacitance. This indicates that the interface states are responsible for the observed frequency variation in C p .…”