Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process

Zainal, Nurfarina; Mitchell, S.J.N.; McNeill, David

doi:10.1063/1.5066750

Cited by 3 publications

(4 citation statements)

References 13 publications

(20 reference statements)

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“…The reason behind small changes of resistance between intrinsic and extrinsic samples is believed to be due to the samples being only lightly doped or the dopant not fully activated. Compared to previous measurements on a 170 nm thick intrinsic Ge stripe resistor [27], a significant reduction of the sheet resistance can be observed as shown in Table 2. The reduction is believed to be due to the use of 500 nm thick Ge film as compared to 170 nm thick in the earlier sample.…”

Section: Results and Analysiscontrasting

confidence: 55%

“…Therefore at this stage, a Ge photodiode with polycrystalline structure will be investigated. As reported previously [27], intrinsic Ge stripe resistors have been demonstrated to have a high resistance value. By doping the Ge films either with p-type or n-type dopants, it would be expected that low resistance could be achieved.…”

Section: Experimeant Detailssupporting

confidence: 60%

“…In this study, test structures including Greek cross; aluminium (Al) pad and rail structures were designed using LEdit software. The advantage of using a Greek cross is that the sheet resistance is extracted at the centre of the cross and an accuracy of better than 0.1% can be achieved [27][28][29][30]. The uniformity of film resistance can be determined by fabricating many small Greek cross structures on the wafer [28] and also, by having Al pads, probing measurement can be repeatable.…”

Section: Photodiode Design and Simulationmentioning

confidence: 99%

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Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Zainal

Mitchell

McNeill

et al. 2020

IJEECS

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Germanium (Ge) photodiodes were fabricated with the new RMG crucible materials that were established in this study. Results show that Ge large square patterns with size of 208 µm x 208 µm were unable to be achieved if ion implantation process was used in formation of photodiode. Delamination can be observed on all test samples during polycrystalline silicon (poly-Si) deposition at 620 oC. This result was in contrast to a previous intrinsic Ge test structure, where good formation of squares with size similar to that 208 µm x 208 µm had been successfully attained even with high annealing temperature above 938 oC. This indicates that doping through ion implantation has affected Ge film and caused delamination even at low temperature. However, good formations of Ge stripes were attained along with the ion implantation process in fabricating the photodiode. Results show that the sheet resistance of Ge stripe has significantly decreased compared to previous Ge resistors. The better resistance is due to the thicker (500 nm) Ge layer. In the case of Ge stripes with a p-i-n junction, only small fraction of test samples have shown a diode characteristic but with high leakage current. Results of I-V measurement show that a large fraction of test samples produced resistor characteristics. The high leakage current is believed due to the fact that the Ge films formed at this stage were polycrystalline in structure. Thus the grain size of Ge stripe has affected the performance. Slight changes on the I-V characteristic of single Ge can be observed when samples were tested under illumination. Therefore, it has potential to be used for future development of energy conversion device.

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Section: Results and Analysiscontrasting

confidence: 55%

Section: Experimeant Detailssupporting

confidence: 60%

Section: Photodiode Design and Simulationmentioning

confidence: 99%

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Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Zainal

Mitchell

McNeill

et al. 2020

IJEECS

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“…To surpass this limitation, we propose the concept of template-assisted electrodeposition of In directly on a silicon substrate and its saturation with V-element. The process combines features of rapid melt growth in crucibles (RMG) [17,18] and templated liquid phase growth [15]. The former can achieve epitaxial crystallization of III-Vs on Si but is plagued by unintentional Si doping and Si precipitation stemming from the dissolution of the Si interface during annealing.…”

Section: Introductionmentioning

confidence: 99%

Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors

et al. 2023

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The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is simple, it is often challenging to perform due to demanding requirements for sample preparation rising from a mismatch in physical properties between those semiconductor groups (e.g. different lattice constants and thermal expansion coefficients), high cost of device-grade materials formation and their post-processing. In this paper, we demonstrate the deposition of group-III metal and III-V semiconductors in microfabricated template structures on silicon as a strategy for heterogeneous device integration on Si. The metal (indium) is selectively electrodeposited in a 2-electrode galvanostatic configuration with the working electrode (WE) located in each template, resulting in well-defined In structures of high purity. The semiconductors InAs and InSb are obtained by vapour phase diffusion of the corresponding group-V element (As, Sb) into the liquified In confined in the template. We discuss in detail the morphological and structural characterization of the synthesized In, InAs and InSb crystals as well as chemical analysis through scanning electron microscopy (SEM), scanning transmission electron microscopy (TEM/STEM), and energy-dispersive X-ray spectroscopy (EDX). The proposed integration path combines the advantage of the mature top-down lithography technology to define device geometries and employs economic electrodeposition (ED) and vapour phase processes to directly integrate difficult-to-process materials on a silicon platform. Graphical abstract

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Facile surface treatment of precursors before rapid melt growth of GaSb on silicon

et al. 2021

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Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process

Cited by 3 publications

References 13 publications

Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors

Facile surface treatment of precursors before rapid melt growth of GaSb on silicon

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