Facile surface treatment of precursors before rapid melt growth of GaSb on silicon

Mishra, Pawan; Lin, Cheng-Yu; Cheng, Chih-Ching; Lee, Ming-Chang M.

doi:10.1016/j.tsf.2021.138797

Cited by 2 publications

(1 citation statement)

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“…Raman spectra are acquired on each sample, i.e., the initial sample which stands for the template GaSb nanowires after the first thermal treatment at 500 • C for 2 h in air conditions (black line), Sample-1 which undergoes a second thermal treatment at 950 • C for 3 h in vacuum (blue line), and Sample-2 which undergoes a second thermal treatment at 600 • C for 3 h in vacuum (red line). It can be seen that the GaSb peak at 226 cm −1 of the initial sample is clear due to the existence of GaSb cores, while this peak almost disappears in Sample-1 and Sample-2 as GaSb decomposes and sublimates in vacuum conditions (Figure S8) [41]. The featured Raman peaks at 111 cm −1 , 150 cm −1 , and 660 cm −1 of Sample-1 and Sample-2 indicate that the obtained nanotubes are all β-Ga 2 O 3 [42].…”

Section: Resultsmentioning

confidence: 99%

Fabrication of β-Ga2O3 Nanotubes via Sacrificial GaSb-Nanowire Templates

Shangguan,

He,

Dong

et al. 2023

Nanomaterials

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β-Ga2O3 nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications. Despite the extensive efforts on β-Ga2O3 nanowires, investigations into β-Ga2O3 nanotubes are rare since the tubular structures are hard to synthesize. In this paper, we report a facile method for fabricating β-Ga2O3 nanotubes using pre-synthesized GaSb nanowires as sacrificial templates. Through a two-step heating-treatment strategy, the GaSb nanowires are partially oxidized to form β-Ga2O3 shells, and then, the residual inner parts are removed subsequently in vacuum conditions, yielding delicate hollow β-Ga2O3 nanotubes. The length, diameter, and thickness of the nanotubes can be customized by using different GaSb nanowires and heating parameters. In situ transmission electron microscopic heating experiments are performed to reveal the transformation dynamics of the β-Ga2O3 nanotubes, while the Kirkendall effect and the sublimation process are found to be critical. Moreover, photoelectric tests are carried out on the obtained β-Ga2O3 nanotubes. A photoresponsivity of ~25.9 A/W and a detectivity of ~5.6 × 1011 Jones have been achieved with a single-β-Ga2O3-nanotube device under an excitation wavelength of 254 nm.

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Section: Resultsmentioning

confidence: 99%