In this paper we study the gas sensing performance of a compact silicon photonics Mach-Zehnder interferometer (MZI) with a coiled sensing arm. A partially exposed sensor was fabricated using deep UV lithography, with a process resolution of 248 nm. Testing with inert gases, He and N 2 , resulted in a measured sensitivity and limit of detection of ∼1458 nm/RIU and ∼8.5×10 -5 RIU, respectively, in a sensing volume of 1.852 picoliters. The temperature sensitivity of the sensor was 166 pm/ • C and the inclusion of a cladded ring-resonator, post-MZI, allowed resolving the temperature drift due to gas flow. In order to further enhance the overlap of the optical mode with the measurand and thus the sensitivity, a suspended MZI was designed and simulated with an expected sensitivity of ∼5500 nm/RIU, for wavelengths around 1550 nm and a temperature of 300 K.
We demonstrate a compact (367× 67 µm 2 ) four-channel wavelength division multiplexer using an arrayed waveguide grating based on multimode interference couplers, and built on a monolithic silicon photonics platform. The design is particularly attractive due to the thin device layer. A seminumerical approach was used for device design and simulation. Optical measurements were found to be consistent with simulation results. The device channel spacing, 3-dB bandwidth and crosstalk were measured to be 97 GHz, 87 GHz and 9.6 dB, respectively, for the designed wavelength of operation near 1310 nm.
We experimentally demonstrate wavelength-independent couplers (WICs) based on an asymmetric Mach-Zehnder interferometer (MZI) on a monolithic silicon-photonics platform in a commercial, 300-mm, CMOS foundry. We compare the performance of splitters based on MZIs consisting of circular and 3rd order (cubic) Bézier bends. A semi-analytical model is constructed in order to accurately calculate each device’s response based on their specific geometry. The model is successfully tested via 3D-FDTD simulations and experimental characterization. The obtained experimental results demonstrate uniform performance across different wafer sites for various target splitting ratios. We also confirm the superior performance of the Bézier bend-based structure, compared to the circular bend-based structure both in terms of insertion loss (0.14 dB), and performance consistency throughout different wafer dies. The maximum deviation of the optimal device’s splitting ratio is 0.6%, over a wavelength span of 100 nm. Moreover, the devices have a compact footprint of 36.3 × 3.8 μm2.
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