Abstract:<span>Germanium (Ge) photodiodes were fabricated with the new RMG crucible materials that were established in this study. Results show that Ge large square patterns with size of 208 µm x 208 µm were unable to be achieved if ion implantation process was used in formation of photodiode. Delamination can be observed on all test samples during polycrystalline silicon (poly-Si) deposition at 620 <sup>o</sup>C. This result was in contrast to a previous intrinsic Ge test structure, where good format… Show more
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