Electrical and Optical Properties of Vapor-Grown GaP

Taylor, R. C.; Woods, J.; Lorenz, M. R.

doi:10.1063/1.1655990

Cited by 42 publications

(4 citation statements)

References 24 publications

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“…The dependence of carrier concentration on growth orientation as observed on the (lll)A and (lll)B faces for both n-and p-type dopants as previously reported by Taylor et al (2) is supported by the results obtained here for both GaAs and GaP substrates (Table I). Undoped layers grown on the (lll)B face of both GaAs and GaP are strongly n-type with carrier concentration of the order 1017 cm -3, whereas similar layers grown on the (lll)A face prove to be high resistivity (103 ohm-cm), n-type for cases in which GaAs substrates were used and high resistivity p-type for GaP substrates.…”

Section: February 1971supporting

confidence: 91%

“…Previously published work describing this growth technique (1)(2)(3) has used various methods to incorporate dopants into the GaP but investigations into the homogeneity of the resultant GaP have not been made in any great detail, although some tentative conclusions have been reached by Taylor et al (2). It is shown in this paper that unless adequate precautions are taken, very significant doping gradients are present in the grown gallium phosphide and it is thought that the use of modified growth techniques to avoid these gradients has enabled a considerable reduction in the scatter of the data relating to the GaP to be achieved.…”

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confidence: 99%

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The Growth of Epitaxial Gallium Phosphide from the Vapor Phase by Halogen Transport

Mottram¹,

Peaker²,

Sudlow³

1971

J. Electrochem. Soc.

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Gallium phosphide has been grown epitaxially by open tube vapor transport using the H2/PCl3/normalGa system. Although normalGaAs substrates have been used for the majority of the work, the more recent use of Czochralski grown normalGaP has enabled a reduction in both strain and stacking fault density of the epitaxial layer to be achieved. Sulfur, tellurium, and zinc have been used as dopants in the preparation of both n‐ and p‐type layers, and relationships have been established between the dopant level in the vapor stream and the carrier concentration in the grown crystal. A Schottky diode technique has been used to detect variations in doping level throughout the depth of a slice and, after modifications to the growth process, uniform doping levels have been established. Measurements of the dependence of mobility on carrier concentration over the range 1014–1019 cm−3 have been made on this substantially homogeneous material and consistent results obtained. The levels of compensation in n‐type material have been shown to be between 1 and 2% over the range of carrier concentration 8×1016−2×1018 cm−3 . The previously reported dependence of doping level on substrate orientation has been confirmed for (111) surfaces and extended to the (100) and (110) surfaces for homoepitaxy.

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Section: February 1971supporting

confidence: 91%

mentioning

confidence: 99%

The Growth of Epitaxial Gallium Phosphide from the Vapor Phase by Halogen Transport

Mottram¹,

Peaker²,

Sudlow³

1971

J. Electrochem. Soc.

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“…Most of these have been on doped material (Montgomery 1968, Taylor et al 1968, Casey et al 1969 but there have been some on undoped material (Epstein 1966, Kamath and Bowman 1967, Miyauche et al 1967 although none on liquid encapsulated material. The electrical impurity in most undoped material appears to be either S or Si, although in undoped vapourgrown material an unidentified acceptor level at 0.35 eV has also been detected (Kamath and Bowman 1967).…”

Section: Introductionmentioning

confidence: 99%

The electrical properties of undoped and oxygendoped GaP grown by the liquid encapsulation technique

Young

Bass

1971

J. Phys. D: Appl. Phys.

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Hall coefficient and conductivity measurements have been made on undoped and oxygen-doped gallium phosphide grown by the liquid encapsulation technique over the temperature range 80 to 400 K. The electrically active impurity in undoped crystals grown from a silica crucible is silicon. The thermal ionization energy of this donor is estimated at 82 meV, which is in good agreement with the optically estimated value. The ionization energy decreases with donor concentration and, to a first approximation, is given (in eV) by ED = 0·082 - 0·021 × 10−6 NDfraction one-third where ND is the donor concentration (cm−3).Undoped crystals grown from a boron nitride crucible and oxygen-doped crystals grown from a silica crucible have similar electrical properties. The room-temperature carrier concentration in these crystals lies between 5 × 109 and 2 × 1015 electrons/cm3 and the thermal ionization energies range from 0·20 to 0·55 eV. The impurities responsible for these levels have not been identified although it seems likely that oxygen is involved.

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“…First, electron inabilities are consistently high. Very little scatter is seen, and the inabilities are generally at least as high as those reported for good quality GaP grown by other techniques (16,17). Only GaP grown by vapor transport onto GaP seeds has higher mobili- ties; e.g., n = 3.0 x 10 TM cm -3, ~H = 187 cm2/V.sec; n --1.3 x 101~ cm -3, #H : 170 cm~/V.sec.…”

Section: Electrical Propertiesmentioning

confidence: 71%

Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling

Nygren¹,

Ringel²,

Verleur³

1971

J. Electrochem. Soc.

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Because it allows the production of substantial quantities of large area, uniformly shaped substrates of normalGaP , the Liquid Encapsulated Czochralski technique is a major advance in normalGaP technology. Successful growth of single‐crystal ingots requires maintenance of visibility of the growth interface. This is accomplished by baking out the B2O3 encapsulant before use, tightly packing the polycrystalline normalGaP charge into the bottom of the crucible before growth, locating the center of heat at the bottom of the crucible, and keeping the B2O3 relatively hot during growth. The resulting ingots have uniformly high Hall mobilities, generally being at least as high as those reported for normalGaP grown by other techniques. The central regions of the ingots have dislocation densities ≤1×105 cm−2 . Effective distribution coefficients for S, Se, Te, and Zn have been found to be 0.23±0.08,0.16±0.05,0.012±0.003,normaland 0.096±0.05 , respectively.

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Electrical and Optical Properties of Vapor-Grown GaP

Cited by 42 publications

References 24 publications

The Growth of Epitaxial Gallium Phosphide from the Vapor Phase by Halogen Transport

The Growth of Epitaxial Gallium Phosphide from the Vapor Phase by Halogen Transport

The electrical properties of undoped and oxygendoped GaP grown by the liquid encapsulation technique

Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling

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