The electrical properties of undoped and oxygendoped GaP grown by the liquid encapsulation technique

Abstract

Hall coefficient and conductivity measurements have been made on undoped and oxygen-doped gallium phosphide grown by the liquid encapsulation technique over the temperature range 80 to 400 K. The electrically active impurity in undoped crystals grown from a silica crucible is silicon. The thermal ionization energy of this donor is estimated at 82 meV, which is in good agreement with the optically estimated value. The ionization energy decreases with donor concentration and, to a first approximation, is given (in eV) by ED = 0·082 - 0·021 × 10−6 NDfraction one-third where ND is the donor concentration (cm−3).Undoped crystals grown from a boron nitride crucible and oxygen-doped crystals grown from a silica crucible have similar electrical properties. The room-temperature carrier concentration in these crystals lies between 5 × 109 and 2 × 1015 electrons/cm3 and the thermal ionization energies range from 0·20 to 0·55 eV. The impurities responsible for these levels have not been identified although it seems likely that oxygen is involved.

International journal: Laser Chemistry

“…The p-type layers were Zn-doped, and the n-type layers were either undoped or S-doped. The dominant electrical impurity in the undoped layers was identified as Si from analysis of the temperature dependence of the Hall coefficient (Young and Bass 1971). Apart from these differences the growth process and properties of the layers were similar to those reported previously (Wight et a1 1973).…”

Liquid Phase Epitaxial Growth of Semi‐insulating GaAs Crystals

“…The resistivity increased exponentially with the reciprocal temperature in all samples with higher room temperature resistivities. The dependence of the activation energy on the room temperature resistivity has already been observed in GaAs (30) and GaP (31) and is well known as Meyer's rule. Although Meyer's rule has not been satisfactorily explained so far, the most likely explanation is thought to be a series of deep levels produced by several impurities (31).…”

“…The dependence of the activation energy on the room temperature resistivity has already been observed in GaAs (30) and GaP (31) and is well known as Meyer's rule. Although Meyer's rule has not been satisfactorily explained so far, the most likely explanation is thought to be a series of deep levels produced by several impurities (31). The highest activation energy obtained from Fig.…”