The Growth of Epitaxial Gallium Phosphide from the Vapor Phase by Halogen Transport

Mottram, Alexander D.; Peaker, А. R.; Sudlow, P. D.

doi:10.1149/1.2408038

Cited by 16 publications

(3 citation statements)

References 15 publications

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“…The substrates used were either (100) or (1 1 1)B oriented slices cut from gallium phosphide ingots grown by the liquid encapsulated Czochralski technique [8] or were high resistivity (p > 103~cm) slices grown by the halide transport vapour deposition technique [4]. Prior to use, they were lapped, polished with 1 tLm, then k tzm paste, degreased, etched in 50 aqua regia and finally rinsed in double deionised water.…”

Section: Liquid Epitaxy Growth Processmentioning

confidence: 99%

“…Although data has been published on the distribution coefficient of various important electricallyactiveimpuritiesin gallium phosphide, these are mostly for growth from a stoichiometric melt at its melting point [3] or for growth from the vapour phase by halide transport [4]. Little information is available on the doping characteristics of the various important elements when the crystals are grown from a Ga rich melt.…”

Section: Introductionmentioning

confidence: 99%

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Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Sudlow¹,

Mottram²,

Peaker³

1972

J Mater Sci

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Layers of epitaxial gallium phosphide doped with either tellurium, sulphur or zinc over the range 10 '~ to 10 '8 cm-2 have been grown from gallium solution using a vertical dipping system. These layers of thickness 60 to 80 /~m have been produced on the (1 00) and (111)B faces of gallium phosphide single crystal substrates at high growth rates. Doping gradients have been investigated by a Schottky barrier technique over an angle lapped region of the grown slice, measuring the capacitance voltage characteristics of the individual barriers. Significant changes in doping level have been observed throughout the thickness of the layers and these are related to the variation of distribution coefficient, the losses of impurity from the system and the presence of competing background impurity systems.

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Section: Liquid Epitaxy Growth Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Sudlow¹,

Mottram²,

Peaker³

1972

J Mater Sci

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“…The first conditions used were borrowed mostly from Sudlow et al's HVPE growth of GaP 114 . In these initial experiments, the Sb temperature zone was held at 600°C and the gallium temperature zone was held at 800°C.…”

Section: Synthesis and Materials Characterization Of Hvpe Grown Gasbpmentioning

confidence: 99%

Direct band gap gallium antimonide phosphide (GaSbxP1-x) for solar fuels.

Russell¹

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Photoelectrochemical water splitting has been identified as a promising route for achieving sustainable energy future. However, semiconductor materials with the appropriate optical, electrical and electrochemical properties have yet to be discovered.In search of an appropriate semiconductor to fill this gap, GaSbP, a semiconductor never tested for PEC performance is proposed here and investigated. Density functional theory (DFT+U) techniques were utilized to predict band gap and band edge energetics for GaSbP alloys with low amount of antimony. The overall objective of this dissertation is to understand the suitability of GaSb x P 1-x alloys for photoelectrochemical water splitting application. Specifically, the goals are to develop synthesis methods, grow GaSb x P 1-x alloys, understand their optical and photoelectrochemical properties, and compare experimental values with theoretical predictions.v DFT+U calculations suggested that with less than 1% Sb incorporated into GaP, an indirect to direct band gap transition should occur. Furthermore, predictions with band edge positions for GaSb x P 1-x alloys with small amount of Sb composition suggest band edge straddling of the water splitting reaction. Preliminary experiments were performed using reactive vapor transport in a microwave plasma reactor. The experiments primarily resulted in growing GaSb x P 1-x nanowires. Extensive characterization using electron microscopy and X-ray diffraction and photoluminescence spectroscopy corroborated the predictions using DFT+U calculations. Initial experimentation utilized a plasma transport scheme of Ga and Sb metals with di-tertbutyl-phosphine gas on the reactor to synthesis GaSb x P 1-x nanowires. Transmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) confirmed ternary alloying of these GaSb x P 1-x nanowires. Direct band gaps were observed between 1.7 eV and 2.2eVwith GaSb x P 1-x compositions between 3% and 6%. However, the method used here is not suitable for growing single crystal films.In order to grow single crystal films on silicon substrates, a new reactor was designed and built for halide vapor phase epitaxy method. Experiments using Halide Vapor Phase Epitaxy (HVPE) reactor were conducted using silicon and sapphire substrates. Experiments using excessive Gallium yielded microwire morphologies.Further experiments with reduced Gallium precursor temperature allowed for growth of quality crystalline films on silicon substrate. The films grown at different temperatures exhibited different amounts of antimonide alloying. The resulting samples exhibited direct band gaps of 1.7 to 2.1 eV evidenced by UV-Vis diffuse reflectance spectroscopy.. viRoom temperature photoluminescence corroborated these findings. Photoelectrochemical studies of the HVPE grown samples show that they can be highly photoactive materials under the proper growth conditions. The best performing sample had saturated photovoltages of .75 eV and a photoactivity of 8 mA/cm 2 under unbiased conditions and 4 suns illumination. This photocurre...

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III-V Compounds

Connolly

1972

Semiconductors

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The band strueture of several zine-blende semieonduetors from a self-eonsistent pseudopotential approach David Brust Solid State Commun., 9:481-85 (1971) Tabulated for seven IIT-V eompounds A review of the eleetrieal and optieal properties of III -V eompound semiconductor films H. H. Wieder J. Vacuum Sei. Tech., 8:210-223 (1971) Charge-related properties of III -V eompounds A. E. Attard J. Phys. C: Solid State Phys. , 3:184-89 (1970) Core transitions and density of conduetion states in the III -V semieonductors

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The Growth of Epitaxial Gallium Phosphide from the Vapor Phase by Halogen Transport

Cited by 16 publications

References 15 publications

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Direct band gap gallium antimonide phosphide (GaSbxP1-x) for solar fuels.

III-V Compounds

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