Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling

Nygren, S.; Ringel, Chris; Verleur, H. W.

doi:10.1149/1.2408025

Cited by 55 publications

(22 citation statements)

References 7 publications

(7 reference statements)

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“…Boron oxide (B2O3) is usually used to overcome this problem [11][12][13]. In the case of gallium arsenide (GaAs), gallium phosphide (GaP) and indium phosphide (InP), arsenic and phosphor have high vapor pressure.…”

Section: Bridgman Methodsmentioning

confidence: 99%

“…Boron oxide (B2O3) is usually used to overcome this problem [11][12][13]. The furnace contains a crystal (1), melt (2), a crucible (3,4), pedestals (5,6), thermal shields (7-10) and heaters (11)(12)(13). Therefore, it is easy to remove a grown crystal from the crucible without mechanical breakage of the crystal and crucible.…”

Section: Bridgman Methodsmentioning

confidence: 99%

“…A growth process with magnetic fields was numerically simulated to demonstrate the validity of the proposed model (11). The configuration of the growth furnace is shown in Fig.…”

Section: Czochralski Methodsmentioning

confidence: 99%

“…Components in a furnace of unidirectional solidification for solar cells: crystal (1), melt (2), crucible(3,4), pedestals (5, 6), thermal shields (7-10) and heaters(11)(12)(13) [16].…”

mentioning

confidence: 99%

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Crystal growth of semiconductor bulk crystals

Kakimoto¹,

Wang²,

Tsukamoto³

et al. 2010

AIP Conference Proceedings

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Section: Bridgman Methodsmentioning

confidence: 99%

Section: Bridgman Methodsmentioning

confidence: 99%

“…A growth process with magnetic fields was numerically simulated to demonstrate the validity of the proposed model (11). The configuration of the growth furnace is shown in Fig.…”

Section: Czochralski Methodsmentioning

confidence: 99%

“…Components in a furnace of unidirectional solidification for solar cells: crystal (1), melt (2), crucible(3,4), pedestals (5, 6), thermal shields (7-10) and heaters(11)(12)(13) [16].…”

mentioning

confidence: 99%

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Crystal growth of semiconductor bulk crystals

Kakimoto¹,

Wang²,

Tsukamoto³

et al. 2010

AIP Conference Proceedings

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show abstract

“…After inserting a new substrate, the furnace again was equilibrated at 1030~ and the growth sequence repeated. The layers were grown on the P{lll}-face of chemically polished GaP substrates grown by the liquid encapsulation Czochralski method (17). The cross-sectional areas of the substrates and aliquot melts were approximately 6 cm 2.…”

Section: Multislice Lpe Operationmentioning

confidence: 99%

Growth of GaP Layers from Thin Aliquot Melts: Liquid Phase Epitaxy as a Commercial Process

Bergh¹,

Saul²,

Paola³

1973

J. Electrochem. Soc.

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The highest electroluminescent device performance in most III-V semiconductor materials was obtained on thin layers grown by liquid phase epitaxy (LPE). LPE has not been developed, however, as a commercial process. From a comparison of the factors affecting layer quality and process economy, it is concluded that a commercial LPE process Iavors the use of thin melts (possibly discarded after deposition), should provide substrate protection prior to deposition, and should be able to terminate LPE growth. ,%. system has been designed in which a large volume of a saturated melt is sectioned into many small but equal thin melts (aliquot) for each substrate. The key to forming aliquots is wetting the substrate by the large volume of the melt in an apparatus constructed of nonwetted materials. The application of the above concepts to a multislice operation is described. Gallium phosphide LPE layers were grown in a single slice aliquot system from melts of 0.5-12 mm in thickness at cooling rates of 0.6~176Constitutional supercooling had no effect on the surface quality of the grown layers. The layers were degraded, however, if the substrates were thermally etched prior to deposition. High deposition efficiency and excellent thickness control were obtained for layers grown from thin melts. The deposition efficiency for layers grown from thick melts is limited by diffusion controlled mass transport in the melt. The diffusion coefficient of P in Ga has been evaluated at ~100O~ and no spontaneous nucleation was observed in melts supercooled by less than approximately 15~The first commercial application of liquid phase epitaxy (LPE) in the semiconductor industry was the manufacture of germanium alloy junction transistors (1). Since this process required the LPE growth on each individual device, it could not compete economically with gas phase epitaxy or diffusion used in batch processing over the entire semiconductor wafer. The interest in LPE was revived with the successful utilization of this process for III-V semiconductors. Some high performance devices could be achieved only through the application of this method. Two outstanding examples are GaP LED's (2, 3) and heterostructure GaAs, GaA1As lasers (4). Other device applications are discussed in a recent review article (5).The quest for improved device performance, increased yield, and the requirements for batch processing have placed increased demands on the LPE technology. Higher quality material is demanded at lower cost. The purpose of this paper is to show, using GaP LED material as an example, that both requirements can be met simultaneously.To produce p-n junctions in GaP with high electroluminescent efficiency, two consecutive LPE layers must be grown, each approximately 25# thick. Layer growth is accomplished by the depletion of a saturated Ga melt; the dopants are introduced into the melt prior to deposition.High-quality devices impose the following material requirements: (i) uniform distribution of dopants in the plane of the junction with only a limited varia...

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Compound Semiconductor Processing

Mullin

2013

Materials Science and Technology

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The sections in this article are Introduction Historical Background Purification General Purification Procedures Zone Refinig and Related Techniques Problems with Specific Compounds In Sb and Ga Sb In As and Ga As In P and Ga P II – VI Compounds Technical Constraints to Melt Growth Techniques Chemical Reactivity Melting Point Vapor Pressure Crystal Growth Horizontal Growth Vertical Growth Crystal Pulling Liquid Encapsulated Czochralski ( LEC ) Pulling The low Pressure LEC Technique The High Pressure LEC Technique Crystal Growth of Specific Compounds In Sb In As and Ga As In P II – VI Compounds: General Bulk Hg 1− x Cd x Te Cd Te and Cd 1− x Zn x Te Zn Se Zn S and Cd S Fundamental Aspects of Crystal Growth Structure Temperature Distribution, Crystal Shape and Diameter Control Solute Distribution Constitutional Supercooling Facet Effect, Anisotropic Segregation and Twinning Dislocations and Grain Boundaries Wafering and Slice Preparation

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Properties of GaP Single Crystals Grown by Liquid Encapsulated Pulling

Cited by 55 publications

References 7 publications

Crystal growth of semiconductor bulk crystals

Crystal growth of semiconductor bulk crystals

Growth of GaP Layers from Thin Aliquot Melts: Liquid Phase Epitaxy as a Commercial Process

Compound Semiconductor Processing

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