Compound Semiconductor Processing

Abstract

The sections in this article are Introduction Historical Background Purification General Purification Procedures Zone Refinig and Related Techniques Problems with Specific Compounds In Sb and Ga Sb In As and Ga As In P and Ga P II – VI Compounds Technical Constraints to Melt Growth Techniques Chemical Reactivity Melting Point Vapor Pressure Crystal Growth Horizontal Growth Vertical Growth Crystal Pulling Liquid Encapsulated Czochralski ( LEC ) Pulling The low Pressure LEC Technique The High Pressure LEC Technique Crystal Growth of Specific Compounds In Sb In As and Ga As In P II – VI Compounds: General Bulk Hg 1− x Cd x Te Cd Te and Cd 1− x Zn x Te Zn Se Zn S and Cd S Fundamental Aspects of Crystal Growth Structure Temperature Distribution, Crystal Shape and Diameter Control Solute Distribution Constitutional Supercooling Facet Effect, Anisotropic Segregation and Twinning Dislocations and Grain Boundaries Wafering and Slice Preparation