Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

“…SnO2 and CdS have a bulk electron affinity ( ) of about 4.0 and 4.4 eV, respectively. The electron affinity does not depend on doping concentration (donor or acceptor) and it defined as the energy difference of an electron between the vacuum level and top of the conductance band [35,36].…”

Physical properties of pulse electrodeposited lead sulfide thin films

“…PbS thin films can be obtained by different deposition techniques such as vacuum evaporation [10], successive ionic layer adsorption and reaction (SILAR) [11], chemical vapor deposition (CVD) [12], electrodeposition (ED) [13][14][15][16], and chemical bath deposition (CBD) [17,18]. Among the above mentioned methods CBD and ED are mostly used as low cost film growth techniques.…”

Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K

“…In this behavior, the straight line fitted to the experimental values for the T o effect should be parallel to that of the ideal SC behavior [3,13]. In order to explain the change in n with temperature, various mechanisms which take the density distribution of N ss , quantum mechanical tunneling and image force lowering into account have been proposed in literature [34][35][36][37][38][39][40][41][42][43][44][45].…”

“…where n ap is apparent ideality factor and r 2 and r 3 are voltage coefficients which may depend on temperature, quantifying the voltage deformation of the BH distribution [28,[42][43][44][45].…”