Physical properties of pulse electrodeposited lead sulfide thin films

Mathews, Nini Rose; Ángeles–Chávez, C.; Cortés-Jácome, M.A.; Toledo-Antonio, J.A.

doi:10.1016/j.electacta.2013.03.044

Cited by 48 publications

(19 citation statements)

References 44 publications

(47 reference statements)

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“…The Pb4f 7/2 and Pb4f 5/2 spin-orbital splitting photoelectrons for PbS (Fig. 4c) are located at binding energies of 138.2 eV and 142.9 eV, respectively, which is consistent with the values of Pb 2+ in the PbS lattices 31 . In addition, it also shows the presence of C peak (Fig.…”

Section: Performance Evaluationsupporting

confidence: 76%

Co-sensitized TiO2 Photoelectrodes by Multiple Semiconductors (Pbs/Pb0.05Cd0.95S/Cds)to Enhance the Performance of a Solar Cell

Zakaria¹,

Krisnandi²,

Gunlazuardi³

2017

Orient. J. Chem

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The effect of PbS/Pb 0.05 Cd 0.95 S/CdS co-sensitization on the quantum dot-sensitized solar cell performance have been investigated. In this research, a TiO 2 nanoparticles was prepared by a sol gel method and immobilized to the FTO (fluorine tin oxide) substrate by dip coating technique. The formation of PbS, Pb 0.05 Cd 0.95 S, and CdS quantum dots (QDs) sensitized TiO 2 photoelectrode was carried out by successive ionic layer adsorption and reaction (SILAR) method. The as-prepared materials were characterized by scanning electron microscopy, energy dispersive spectroscopy, X-ray diraction, and X-ray photoelectron spectroscopy. Our photoelectro chemical evaluation indicated that the photocurrent of PbS/Pb 0.05 Cd 0.95 S/CdS multiple semiconductor (0.363 mA/cm 2 ) is higher than the CdSsingle sensitizer (0.190 mA/cm 2 ), resulting an increase in a photocurrent of 91%. Under 3.5 mW/cm 2 illumination, we found that this photoelectrodes have an optimum short-circuit photocurrent density (I sc ) of 0.429 mA/cm 2 and energy conversion eciency of 1.42%, which is 160% higher than that of a CdS single sensitizer (0.54%). The excellent photoelectro chemical properties of our photoanode, suggest that the TiO 2 lms co-sensitized by PbS/Pb 0.05 Cd 0.95 S/CdS quantum dots have potential application in a solar cells.

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Section: Performance Evaluationsupporting

confidence: 76%

Co-sensitized TiO2 Photoelectrodes by Multiple Semiconductors (Pbs/Pb0.05Cd0.95S/Cds)to Enhance the Performance of a Solar Cell

Zakaria¹,

Krisnandi²,

Gunlazuardi³

2017

Orient. J. Chem

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“…It is also observed that the full width at half maximum (FWHM) of (420) peak sharply decreases from 0.81 to 0.47 with the deposition potential variation from À0.8 V to À0.97 V. However, at À1.0 V, FWHM is sharply increased to 0.84 and it further increases to 1.10 at À1.1 V. The observed variation in both the parameters (FWHM and intensity) of the diffraction peaks strongly reveals the understandable improved crystallinity of the lms at À0.97 V. The excess Sb at lower potentials and excess Co at higher potentials seem to contribute to the decrease in crystallite size and crystallinity of the CoSb 3 phase. The crystallite size (D) is estimated using (013) and (420) reections employing Debye Scherrer formula 28 and its variation with deposition potential is shown in Fig. 8.…”

Section: Structural Behaviormentioning

confidence: 99%

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Yadav

Chaudhary

et al. 2017

RSC Adv.

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In this study, the deposition potential has been used to exercise control on structural and electrical properties, and associated tuning of thermoelectric properties of CoSb 3 thin films prepared by electrochemical synthesis. Deposition potential is observed to have a strong effect on the stoichiometry of films and orientation of crystallites, and consequently on the physical properties. X-ray diffraction patterns reveal that the films grown at lower deposition potentials (#À0.9 V) have (013) preferred orientation whereas (420) orientation is observed at higher negative deposition potentials. A correlation of the deposition potential controlled composition from a Sb-rich to a Co-rich regime and the resulting tuning of electrical transport parameters and thermoelectric properties of the CoSb 3 thin films is established. With enlarged crystallites and enhanced textured structure at a deposition potential of À0.97 V, a significantly large Seebeck coefficient (58 mV K À1) with a simultaneously large electrical conductivity (2.1 Â 10 3 U À1 cm À1) are achieved as a result of the high mobility (60 cm 2 V À1 s À1). A high value for room temperature power factor (706 AE 9 mW K À2 m À1) observed in the as-grown CoSb 3 thin films without any further post-deposition annealing makes their synthesis and thermoelectric studies interesting for their potential applications in power generation and refrigeration.

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“…1a shows the cyclic voltammetry of 0.1 M Na 2 S 2 O 3 solution. Sodium thiosulfate is unstable in acidic media, which is reduced to colloidal sulfur according to the following reaction (2) [1,33,34]:…”

Section: Resultsmentioning

confidence: 99%

Electrodeposition of SnS Thin film Solar Cells in the Presence of Sodium Citrate

Kihal

Rahal

Affoune

et al. 2017

J. Electrochem. Sci. Technol

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SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and 560 cm-1. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of 30 Ω cm, carrier concentration of 2.6 × 10

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Physical properties of pulse electrodeposited lead sulfide thin films

Cited by 48 publications

References 44 publications

Co-sensitized TiO2 Photoelectrodes by Multiple Semiconductors (Pbs/Pb0.05Cd0.95S/Cds)to Enhance the Performance of a Solar Cell

Co-sensitized TiO2 Photoelectrodes by Multiple Semiconductors (Pbs/Pb0.05Cd0.95S/Cds)to Enhance the Performance of a Solar Cell

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Electrodeposition of SnS Thin film Solar Cells in the Presence of Sodium Citrate

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Physical properties of pulse electrodeposited lead sulfide thin films

Cited by 48 publications

References 44 publications

Co-sensitized TiO2 Photoelectrodes by Multiple Semiconductors (Pbs/Pb0.05Cd0.95S/Cds)to Enhance the Performance of a Solar Cell

Co-sensitized TiO2 Photoelectrodes by Multiple Semiconductors (Pbs/Pb0.05Cd0.95S/Cds)to Enhance the Performance of a Solar Cell

Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb3 thin films

Electrodeposition of SnS Thin film Solar Cells in the Presence of Sodium Citrate

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Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films