In this study, the deposition potential has been used to exercise control on structural and electrical properties, and associated tuning of thermoelectric properties of CoSb 3 thin films prepared by electrochemical synthesis. Deposition potential is observed to have a strong effect on the stoichiometry of films and orientation of crystallites, and consequently on the physical properties. X-ray diffraction patterns reveal that the films grown at lower deposition potentials (#À0.9 V) have (013) preferred orientation whereas (420) orientation is observed at higher negative deposition potentials. A correlation of the deposition potential controlled composition from a Sb-rich to a Co-rich regime and the resulting tuning of electrical transport parameters and thermoelectric properties of the CoSb 3 thin films is established. With enlarged crystallites and enhanced textured structure at a deposition potential of À0.97 V, a significantly large Seebeck coefficient (58 mV K
À1) with a simultaneously large electrical conductivity (2.1 Â 10 3 U À1 cm
À1) are achieved as a result of the high mobility (60 cm 2 V À1 s
À1). A high value for room temperature power factor (706 AE 9 mW K À2 m
À1) observed in the as-grown CoSb 3 thin films without any further post-deposition annealing makes their synthesis and thermoelectric studies interesting for their potential applications in power generation and refrigeration.
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