Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb₃ thin films

Abstract

In this study, the deposition potential has been used to exercise control on structural and electrical properties, and associated tuning of thermoelectric properties of CoSb 3 thin films prepared by electrochemical synthesis. Deposition potential is observed to have a strong effect on the stoichiometry of films and orientation of crystallites, and consequently on the physical properties. X-ray diffraction patterns reveal that the films grown at lower deposition potentials (#À0.9 V) have (013) preferred orientation whereas (420) orientation is observed at higher negative deposition potentials. A correlation of the deposition potential controlled composition from a Sb-rich to a Co-rich regime and the resulting tuning of electrical transport parameters and thermoelectric properties of the CoSb 3 thin films is established. With enlarged crystallites and enhanced textured structure at a deposition potential of À0.97 V, a significantly large Seebeck coefficient (58 mV K À1) with a simultaneously large electrical conductivity (2.1 Â 10 3 U À1 cm À1) are achieved as a result of the high mobility (60 cm 2 V À1 s À1). A high value for room temperature power factor (706 AE 9 mW K À2 m À1) observed in the as-grown CoSb 3 thin films without any further post-deposition annealing makes their synthesis and thermoelectric studies interesting for their potential applications in power generation and refrigeration.

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

“…Copyright 2018 MDPI), and RF sputtering . (b) Different chemical synthesis methods such as spray pyrolysis technique, electrodeposition (Reproduced with permission from ref . Copyright 2017 The Royal Society of Chemistry), and spin coating (Reproduced with permission from ref .…”

“…physical, chemical, and biological methods. Figure a,b illustrates the different deposition and synthesis processes. − …”

An overview of thermoelectric films: Fabrication techniques, classification, and regulation methods

“…Ahmed et al [80] deposited CoSb 3 skutteruddite thin films by using RF co-sputtering method, and they reported a maximum power factor of 4.1 µW•cm −1 •K −2 for the film deposited at a 200-• C substrate temperature. Recently, they synthesized a series of CoSb 3 thin films with Sb contents at room temperature via RF co-sputtering, and obtained a maximum power factor of 12.6 µW•cm −1 •K −2 [43] Using the deposition potential in electrochemical synthesis, Yadav et al [81] exercise controlled the 047210-6 structural and electrical properties, and associated tuning of TE properties of CoSb 3 thin films, and they achieved a highest roomtemperature power factor of 7.06 ± 0.09 µW•cm −1 •K −2 at a deposition potential of −0.97 V.…”

Ce‐filled Ni1.5Co2.5Sb12 Skutterudite Thin Films with Record‐High Figure of Merit And Device Performance

“…d) Comparison of as-achieved maximum power factors S 2 𝜎 between this work and reported CoSb 3 -based thin films. [39][40][41][42][43]47,49,50,[54][55][56][57][58][59][60][61][62][63][64][65][66][67][68] The S 2 𝜎 of bulk skutterudites are also provided for a comparison. [35,[69][70][71] The inset shows the photo of as-deposited thin films.…”

“…Figure 1d compares the as-achieved maximum S 2 𝜎 between Ce 0.3 Ni 1.5 Co 2.5 Sb 12 thin film developed in this work and reported CoSb 3 -based thin films. [39][40][41][42][43]47,49,50,[54][55][56][57][58][59][60][61][62][63][64][65][66][67][68] The S 2 𝜎 of bulk skutterudites are also provided for a comparison. [35,[69][70][71] As can be seen, an ultrahigh S 2 𝜎 of ≈54.8 μW cm −1 K −2 is obtained at 683 K in our designed Ce 0.3 Ni 1.5 Co 2.5 Sb 12 thin film, which is significantly higher than those of previously reported CoSb 3 -based thin films by ≈3 times.…”