Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

Abstract

Scandium oxide was deposited by means of high pressure sputtering in the same conditions on differently prepared (100) Si substrates: chemical oxide, nitrided Si and deposited silicon nitride. Time-of-flight secondary ion mass spectroscopy and X-ray photoemission spectroscopy show that polycrystalline Sc 2 O 3 films were grown with a composition which is constant with depth. According to Capacitance-Voltage hysteresis measurements, nitrided Si or deposited SiN x proved to present a lower density of defects in the interface as compared to RCA native oxide.

High-kgadolinium scandate on Si obtained by high pressure sputtering from metal targets andin-situplasma oxidation

“…The spin orbit splitting of the Gd 4d core-level (with components 4d5/2 and 4d3/2 located at around 142.2 and 149.1 eV, respectively) are in agreement with reported Gd2O3 [33,34]. The doublet for the Sc 2p level at about 401.5 eV (for Sc 2p3/2) and at 406.9 eV (for Sc 2p1/2) corresponds with Sc2O3 as it is stated in other works [35,36]. In the case of O 1s, it is observed an asymmetric peak that is fitted with two components: one lower at 529.6 eV and other higher at 531.5 eV.…”