Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content

Abstract

In addition to beneficial ∼3 orders of magnitude in the resistance ratio, the amorphous HoScOx film exhibits excellent resistive switching (RS) properties of low electrical stress, thin thickness (36 nm), and simple process without forming or annealing, making it potentially useful for nonvolatile memory applications. Obvious oxygen effects are seen: no apparent RS property is detected in the near-stoichiometric film with 57.6 at. % oxygen, whereas distinct RS characteristics are observed in the oxygen-deficient (50.7 at. %) film. The RS property obtained is thought to be dominated by the high oxygen vacancy concentration, which serves as the filamentary conduction in the sample.

Nonvolatile unipolar resistive switching behavior of amorphous BiFeO3 films

“…It has been pointed out that in perovskite oxide thin films traps are mainly formed due to the oxygen vacancies [26]. These trapping centers and their physical separation were found to be responsible for transition between different resistance states due to the trapping and detrapping of charge carriers [27].…”

Mechanical property evaluations of an amorphous metallic/ceramic multilayer and its role in improving fatigue properties of 316L stainless steel

“…More details about HSO sputtering target preparations are given in our previous works [17,18]. A multilayer consisting of ten alternating layers of TFMG and HSO (TFMG/HSO) was deposited on Si wafer and 316L stainless steel substrates using a direct current (DC) and radio frequency (RF) magnetron sputtering system with sputtering power of 100 W, base pressure of 2 x 10 -6 Torr, working pressure of 10 mTorr, and working distance of 100 mm.…”

“…However, the major drawback of the metal oxides compared to the generally softer transition metal nitrides is the low toughness and transverse rupture strength [13,16]. In our previous works [17,18], we have found HoScO x (HSO) thin film to be potentially beneficial for microelectronic applications. In this study, an amorphous HSO is selected because it is one of the rare-earth based oxides having good thermal stability without crystallization up to 800°C [19].…”

Graphene resistive random memory — the promising memory device in next generation

“…[61] For graphene ZnO TRRAM, a forming process is needed, but if the dielectric layer is changed into a rare-earth-oxidebased thin film, the forming process is not necessary owing to its forming-free characteristics. [62][63][64] Reference [65] fabricated multilayer grapheme(MLG)/Dy 2 O 3 /ITO TRRAM with 80% transmittance at 550 nm. Dy 2 O 3 has a direct and wide bandgap of ∼ 5.5 eV at room temperature, which meets the intrinsic transparency requirement in resistive switching materials without sacrificing the memory density or capacity.…”