In addition to beneficial ∼3 orders of magnitude in the resistance ratio, the amorphous HoScOx film exhibits excellent resistive switching (RS) properties of low electrical stress, thin thickness (36 nm), and simple process without forming or annealing, making it potentially useful for nonvolatile memory applications. Obvious oxygen effects are seen: no apparent RS property is detected in the near-stoichiometric film with 57.6 at. % oxygen, whereas distinct RS characteristics are observed in the oxygen-deficient (50.7 at. %) film. The RS property obtained is thought to be dominated by the high oxygen vacancy concentration, which serves as the filamentary conduction in the sample.
Resistive switching (RS) characteristics and mechanism of multicomponent oxide (MCO) memory device are studied. MCO based on an amorphous (ZrCuAlNi)Ox active layer with a thin thickness of ∼15 nm is sputter deposited without substrate heating or post-annealing. The device shows forming-free unipolar RS properties of low operation voltage (<1.7 V), long retention time, good endurance, and resistance ratio. The RS property is considered to be dominated by the filamentary conduction due to the presence of oxygen vacancies in the grain boundary-free structure.
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