Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions

Amphoteric behavior of arsenic in HgCdTe

“…This amphoteric behavior of arsenic is consistent with LPE results. 2,3 In Table II, some of the electrical properties of LPE material are examined when they are subjected to tellurium-and mercury-saturated anneals at low temperature. Such low temperature anneals have been found to modify the vacancy concentrations, but not the electrical activity of the arsenic in the lattice, 2,4-6 and thus no site transfer has been assumed in the theoretical results reported in Table II.…”

MBE growth and characterization of in situ arsenic doped HgCdTe

“…The arsenic incorporated into the layers during growth is not active as-grown. Figure 4 shows the mobility vs carrier concentration for p- Also shown for comparison are LPE data 11,12 and other MBE data. P-type conduction is achieved only after layers are annealed at temperatures of either 436 or 300°C.…”

“…P-type conduction is achieved only after layers are annealed at temperatures of either 436 or 300°C. Shown for comparison are liquid phase epitaxy (LPE) data 11,12 and other reported MBE data. Although arsenic has been incorporated into HgCdTe layers through a broad range of concentrations (2E16 to 4E19 cm -3 ), p-type conduction is not achieved in this same range.…”

The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys

“…Swartz et al 10 have concluded that increasing of carrier lifetime in the heaviest doped samples is caused by trapping states which may be introduced during the incorporation and activation of arsenic. It is hardy to agree with this conclusion, especially if the results of experimental [11][12][13][14][15][16][17][18][19][20][21][22][23] as well as theoretical [24][25][26] works, showing a significant reduction of SRH centers in the As-doped structures annealing in mercury atmosphere, has been examined. To explain these divergences, we re-examine the carrier lifetime in this paper.…”