Amphoteric behavior of arsenic in HgCdTe

Berding, M. A.; Sher, A.

doi:10.1063/1.122987

Cited by 46 publications

(30 citation statements)

References 18 publications

(16 reference statements)

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“…One of the major uncertainties remains in the knowledge of the crystal location for arsenic before and after thermal activation and what the exact mechanism for activation is. The commonly admitted scenario proposed by Berding and Sher, 7 and Vydyanath, 8 and refined by Schaake, 9 Chandra et al, 10 and Shaw,11 assumes that arsenic is incorporated into the mercury lattice site as MBE growth occurs under tellurium-rich conditions and that the high-temperature annealing enables the arsenic atoms to site transfer, substituting a tellurium atom. In this amphoteric situation, arsenic evolves from a donor to an acceptor upon thermal annealing, in good agreement with electronic transport measurements.…”

Section: Introductionmentioning

confidence: 97%

Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal

Ballet

Polge

Biquard

et al. 2009

Journal of Elec Materi

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Extended x-ray absorption fine structure (EXAFS) investigation was carried out on two arsenic-doped HgCdTe samples. Arsenic incorporation was achieved with a non-conventional radiofrequency plasma source in a molecular beam epitaxy reactor. Both samples were taken from the same epitaxial run. One of these samples followed a 400°C activation anneal under Hg pressure. EXAFS was used here to probe the local environment around arsenic, and the experimental data were fit through first-principle calculations to extract a quantitative description of the arsenic site transfer upon annealing. Arsenic neighbors are described in terms of chemical nature, numbers and distances. Arsenic was found to be involved mostly in noncrystalline structures, either an As 2 Te 3 glass or an AsHg compact structure. The effect of annealing is to break down the chalcogenide glass, thus favoring the compact AsHg structure. EXAFS results were compared to 77 K Halleffect measurements, and a very good correlation was found. These findings were compared to the commonly admitted scenario for arsenic site incorporation and transfer upon annealing and provided a new picture and the first experimental evidence of the site transfer.

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Section: Introductionmentioning

confidence: 97%

Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal

Ballet

Polge

Biquard

et al. 2009

Journal of Elec Materi

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“…After the jump the vacancy can move far from the given site and then As · Hg has to wait when another cation vacancy appears in the first coordinate sphere. According to the second model (Berding et al [15]), the mercury vacancy and As · Hg can form the neutral complexes A × = (As Hg V Hg ) × , which move as a single whole, however, according to [15], the vacancy is a single charged defect.…”

Section: Discussionmentioning

confidence: 99%

High temperature arsenic doping of CdHgTe epitaxial layers

Власов¹,

Bogoboyashchyy²,

Bonchyk³

et al. 2004

Cryst. Res. Technol.

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Experimental results on solid-state arsenic doping of the n-type bulk and ISOVPE epitaxial Cd X Hg 1-X Te (X = 0.19÷0.3) alloys are presented. The arsenic doped thin epitaxial Cd x Hg 1-x Te films (n As ≈ 5⋅10 16 ÷1⋅1020 cm -3; d =2÷5 µm) obtained by RF sputtering in a mercury glow discharge were used as As diffusion sources. The arsenic diffusion and activation were carried out at temperatures Т = 500÷600°С under Hg vapour pressure. Immediately after the high temperature treatment all samples were annealed to annihilate point defects. The SIMS analysis was used for determination of the quantitative admixture distribution of As in the diffusion area. The arsenic electrical activity has been evaluated by means of differential Hall, resistivity and thermoemf measurements. The analysis of experimental data obtained as well as their comparison with previously obtained results has been performed.

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“…This activation process is commonly understood as site transfer from site II to site VI for the substitutional arsenic. [1][2][3] Table I presents the sample characteristics together with the main electrical results. The effects of three different annealing conditions have been probed in this experiment.…”

Section: Arsenic Activation Anneal and Electrical Characterizationmentioning

confidence: 99%

HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth

Gravrand

Ballet

Baylet

et al. 2009

Journal of Elec Materi

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Extrinsic p-type doping during molecular-beam epitaxy (MBE) growth represents an essential generic toolbox for advanced heterostructures based on the HgCdTe material system: PiN diodes, mesa avalanche photodiodes (APD) or third-generation multispectral focal-plane arrays. Today, arsenic appears to be the best candidate to fulfill this role and our group is actively working on its incorporation during MBE growth, using an original radio frequency (RF) plasma source for arsenic. Such a cell is supposed to deliver a monatomic As flux, and as expected we observed high As electrical activation rates after annealing short-wave (SW), mid-wave (MW), and long-wave (LW) layers. At last, a couple of technological runs have been carried out in the MW range in order to validate the approach on practical devices. p-on-n focal-plane arrays (FPA) have been fabricated using a mesa delineated technology on an As-on-In doped metallurgical heterojunction layer grown on a lattice-matched CdZnTe layer (320 9 256, 30 lm pitch, 5 lm cutoff at 77 K). Observed diodes exhibit very interesting electro-optical characteristics: large shunt impedance, high quantum efficiency, and no noticeable excess noise. The resulting focalplane arrays were observed to be very uniform, leading to high operabilities. Noise equivalent temperature difference (NETD) distributions are very similar to those observed with the As ion-implanted p-on-n technology, fabricated in our laboratory as well. In our opinion, those excellent results demonstrate the feasibility of our MBE in situ arsenic doping process. Good electrical activation rates and high-quality layers can be obtained. We believe that such an approach allows precise control of the p-doping profile in the HgCdTe layer, which is necessary for advanced structure designs.

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Amphoteric behavior of arsenic in HgCdTe

Cited by 46 publications

References 18 publications

Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal

Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal

High temperature arsenic doping of CdHgTe epitaxial layers

HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth

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