MBE growth and characterization of in situ arsenic doped HgCdTe

Chen, A. C.; Zandian, Majid; Edwall, D. D.; Wames, R. E. De; Wijewarnasuriya, P. S.; Arias, J. M.; Sivananthan, S.; Berding, M. A.; Sher, A.

doi:10.1007/s11664-998-0021-7

Cited by 39 publications

(15 citation statements)

References 14 publications

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“…The effect of high-temperature annealing is to switch the conductivity to p-type with hole density approximately half the arsenic density. These results are quite common for arsenic-doped material grown by molecular beam epitaxy, 5,6 indicating that our samples were very much representative of the state of the art in terms of arsenic activation. They could be explained in terms of a site transfer The reduction factor S 2 0 is fixed at 0.8.…”

Section: Correlation To Electronic Transport Measurementssupporting

confidence: 54%

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Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal

Ballet

Polge

Biquard

et al. 2009

Journal of Elec Materi

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Extended x-ray absorption fine structure (EXAFS) investigation was carried out on two arsenic-doped HgCdTe samples. Arsenic incorporation was achieved with a non-conventional radiofrequency plasma source in a molecular beam epitaxy reactor. Both samples were taken from the same epitaxial run. One of these samples followed a 400°C activation anneal under Hg pressure. EXAFS was used here to probe the local environment around arsenic, and the experimental data were fit through first-principle calculations to extract a quantitative description of the arsenic site transfer upon annealing. Arsenic neighbors are described in terms of chemical nature, numbers and distances. Arsenic was found to be involved mostly in noncrystalline structures, either an As 2 Te 3 glass or an AsHg compact structure. The effect of annealing is to break down the chalcogenide glass, thus favoring the compact AsHg structure. EXAFS results were compared to 77 K Halleffect measurements, and a very good correlation was found. These findings were compared to the commonly admitted scenario for arsenic site incorporation and transfer upon annealing and provided a new picture and the first experimental evidence of the site transfer.

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Section: Correlation To Electronic Transport Measurementssupporting

confidence: 54%

“…5,6 Despite all these efforts and progress, there are still many unknowns regarding this kind of doping. One of the major uncertainties remains in the knowledge of the crystal location for arsenic before and after thermal activation and what the exact mechanism for activation is.…”

Section: Introductionmentioning

confidence: 99%

Extended X-ray Absorption Fine Structure Investigation of Arsenic in HgCdTe: the Effect of the Activation Anneal

Ballet

Polge

Biquard

et al. 2009

Journal of Elec Materi

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“…9 As-grown layers are n-type with n $ 1% of the As concentration. 2,10,11 Again, this approximates to the annealed carrier concentration for undoped MBE material indicating that the As is inactive. Annealing at 250°C for 24 h under Hg saturation did not change the electrical properties.…”

Section: Literature Review Of Arsenic Doping In Mctmentioning

confidence: 72%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

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“…Many of the lifetimes reported for As-doped HgCdTe around 80 K appear too long, including several of the samples from this study. Figure 10 contains a compendium of 80-K photoconductance-lifetime results [15][16][17][18][19][20][21] for As-doped, x ϳ 0.3 HgCdTe. Also Fig.…”

Section: Photoconductance-lifetime Measurementsmentioning

confidence: 99%