Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics

Liu, Ming; Li, Shandong; Obi, Ogheneyunume; Lou, Jing; Rand, Scott D.; Sun, Nian X.

doi:10.1063/1.3597796

Cited by 103 publications

(70 citation statements)

References 19 publications

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“…A giant E-field-induced magnetic anisotropy caused by a strong ME coupling is used to control the orientation of magnetization and thus dynamically manipulate magnetoresistance in AMR and GMR devices [32,34]. This can be expressed in the equation of the resistance as a function of H eff :…”

Section: Electrical Tuning Of Magnetoresistance In Layered Multiferromentioning

confidence: 99%

Voltage control of magnetism in multiferroic heterostructures

Liu

Sun

2014

Phil. Trans. R. Soc. A.

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132

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Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

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Section: Electrical Tuning Of Magnetoresistance In Layered Multiferromentioning

confidence: 99%

Voltage control of magnetism in multiferroic heterostructures

Liu

Sun

2014

Phil. Trans. R. Soc. A.

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132

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“…Earlier studies of this type primarily focused on epoxy bonded layered composites [5][6][7][8] or polycrystalline ferromagnetic films deposited on ferroelectric substrates. [9][10][11][12][13][14][15] Herein, we report on the converse ME effect in heteroepitaxial structures of nickel ferrite NiFe 2 O 4 (NFO) films directly grown onto (001)-oriented single crystal lead zinc niobate-lead titanate (PZN-PT) or lead magnesium niobatelead titanate (PMN-PT) substrates. Based on our previous theoretical work, a strong ME effect is expected in such structures because of the strong coupling resulting from high values of the magnetostriction and piezoelectric coefficients.…”

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confidence: 99%

“…2 This work focuses on converse ME effects by electrostatic tuning of ferromagnetic resonance (FMR) in ferrite-ferroelectric composites. [5][6][7][8][9][10][11][12][13] The piezoelectric strain due to an electric field E manifests as an internal magnetic field in the ferromagnetic phase that causes a frequency shift Df or a field shift DH in the FMR or hybrid modes, with the strength of ME interaction A defined by A ¼ Df/E (or DH/E). Earlier studies of this type primarily focused on epoxy bonded layered composites [5][6][7][8] or polycrystalline ferromagnetic films deposited on ferroelectric substrates.…”

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confidence: 99%

Electrostatic tuning of ferromagnetic resonance and magnetoelectric interactions in ferrite-piezoelectric heterostructures grown by chemical vapor deposition

Liu

Zhou

et al. 2011

Applied Physics Letters

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Magnetoelectric interactions as a function of applied electric field have been studied in ferrite-ferroelectric heterostructures at microwave frequencies. The measurements are performed on 1.5–2.0 μm thick nickel ferrite (NiFe2O4) films grown heteroepitaxially on lead zinc niobate-lead titanate and lead magnesium niobate-lead titanate substrates using direct liquid injection chemical vapor deposition. Large shifts in the ferromagnetic resonance profile are observed in these heterostructures due to strong magnetoelectric coupling resulting from electrostatic field induced changes in the magnetic anisotropy field. Theoretical estimates of field shifts are in good agreement with the experimental data.

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“…Liu et al 18 investigated E-field-controlled magnetization of the free layer Co in FeMn/Ni 80 Fe 20 /Cu/Co/PZN-PT heterostructure, where a magnetoresistance (MR) change was also demonstrated based on GMR. A minimum and maximum MR were measured when magnetic alignment of adjacent Co and NiFe layers was parallel and antiparallel, respectively.…”

Section: Introductionmentioning

confidence: 99%