Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

Zhang, Feng; Zhang, Huairuo; Krylyuk, Sergiy; Milligan, Cory A.; Zhu, Yan; Zemlyanov, Dmitry; Bendersky, Leonid A.; Burton, Benjamin P.; Davydov, Albert V.; Appenzeller, Joerg

doi:10.1038/s41563-018-0234-y

Cited by 320 publications

(353 citation statements)

References 24 publications

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“…In addition to electrode material, 2D materials could also be used as active layer to increase resistance of memristive devices [63] and reduce operating current. By inserting a tunneling barrier layer (i.e., Al 2 O 3 film) between MoTe 2 (6-36 nm) and electrode to suppress the tunneling current, Zhang shows excellent performance, such as an ON/OFF ratio of 10 5 to 10 6 ( Figure 2c), large nonlinearity at low resistance state (LRS), and high resistance state (HRS) resistance of larger than 10 TΩ.…”

Section: Power Consumptionmentioning

confidence: 99%

Section: Device Reliabilitymentioning

confidence: 99%

“…Although the growth of conductive filaments and electrochemical dynamics of nanoscale clusters in the TMOs-based memristive devices have been studied by transmission electron microscopy, [7,58,59] further understanding of switching mechanism may benefit from the use of transparent 2D materials. [57,63] These characterizations are crucially important to deeply understand the working mechanisms of memristive and neuromorphic devices. In operando spectromicroscopy [62] has been used to reveal the redox reaction driven switching.…”

Section: Introductionmentioning

confidence: 99%

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2D Layered Materials for Memristive and Neuromorphic Applications

Wang

Meng

et al. 2019

Adv Elect Materials

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demonstrated that the memristive devices exhibit many promising features, [3][4][5][6][7][8] such as non-volatility, high speed switching, high endurance, high-density integration, CMOS-compatible fabrication, and so on. These features make them ideal candidates for applications in memory devices, [3,5,9] in-memory computing, [3,[10][11][12] and edge computing. [13,14] The working principle of the TMOs-based memristive devices relies on ion drift or diffusion, which resembles motion of ions in the biological neurons and synapses. The ionic motions exhibit dynamic behaviors. Thus, the memristive devices can be used to emulate the synaptic plasticity [15] and neurons. [16][17][18] Compared to traditional silicon synapses [19][20][21] and neurons [22,23] requiring complex circuits, such emerging memristive devices have compact structures and enhanced func-

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Section: Power Consumptionmentioning

confidence: 99%

Section: Device Reliabilitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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2D Layered Materials for Memristive and Neuromorphic Applications

Wang

Meng

et al. 2019

Adv Elect Materials

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“…As of now, flash memory has also been occupying the main market share of the memory field; but the integration density of flash memory is facing its physical limit. Owing to its superior characteristics, random resistance access memory (RRAM) has also been regarded as a promising candidate for next‐generation nonvolatile memories …”

Section: Enhanced Electronic Device Performance By Ion Beammentioning

confidence: 99%

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Zhan

Song

et al. 2019

Small

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properties because of their special struc ture. When the materials reach a nano meter size, the electrical, optical, magnetic, and other properties of the materials will be altered greatly because of the small size effect, quantum size effect, sur face and boundary effects, and Coulomb blockade effect. [1] Currently, nanomaterials have been widely applied in many fields, including computers, catalysis, sensors, energy, and environmental protection. [2][3][4][5][6][7][8][9][10][11] As the demand increases, people aspire to fabricate nanomaterials with greater prop erties. Many methods have been used to improve the properties of nanomaterials, including doping, surface reconstruc tion, semiconductor composite, and metal nanoparticle embedding. [12][13][14][15][16][17][18][19][20] These days, ion beam techniques, including ion implantation, irradiation, and focused ion beam (FIB), have been extensively used to modulate the properties of nanomaterials. Moreover, ion beam techniques are regarded as a promising technique for doping and surface modification. Compared with doping during growth and diffusion, ion implantation is more controllable and reproducible. In addition, ion implantation is also an effective method for embedding nanoclusters in body materials. Moreover, ion irradiation is an effective method to modulate the morphology and surface structure of the mate rials. Therefore, via using this technique, various properties of nanomaterials can be tailored. FIB is typically used for the in situ study of ionirradiated materials. Figure 1 shows the applications of ion beam techniques for nanomaterial surface modification.Ion implantation, as an ion beam technique, has been extensively applied to the modulation of nanomaterial sur faces. Moreover, the technique has also been extensively used in the field of microelectronics. Ion implantation has replaced diffusion as a doping method to introduce dopants into the semiconductors. As an industrial technique, it exhibits high controllability and accuracy. In contrast to other doping strat egies, almost all elements can be introduced into the target materials by ion implantation and it does not introduce other impurity elements. In addition, ion implantation is not restricted by the solid solubility of elements in the mate rials. Ion implantation can be described as a collision process Nanomaterials have gained plenty of research interest because of their excellent performance, which is derived from their small size and special structure. In practical applications, to acquire nanomaterials with high performance, many methods have been used to modulate the structure and components of materials. To date, ion beam techniques have extensively been applied for modulating the performance of various nanomaterials. Energetic ion beams can modulate the surface morphology and chemical components of nanomaterials. In addition, ion beam techniques have also been used to fabricate nanomaterials, including 2D materials, nanoparticles, and nanowires. Compared with conventional metho...

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“…Power dissipation in 2D materials, including graphene, black phosphorus, and other TMDCs, has been studied by Raman spectroscopy under the high electrical fields applied to the FET structure 11,13–16. To the best of our knowledge, the power dissipation and electrical breakdown of molybdenum ditelluride (MoTe 2 ) have not been studied intensively, although it is one of the most promising TMDCs that can be employed for future 2D device applications requiring ambipolar semiconducting properties 17–20. MoTe 2 is known to have a 2H semiconducting phase with the thickness dependent band gap in the range from 0.83 to 1.1 eV 21,22.…”

Section: Introductionmentioning

confidence: 99%

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe₂

Kim

Issarapanacheewin

Moon

et al. 2020

Adv Elect Materials

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2D molybdenum ditelluride (MoTe2) has recently received significant attention due to its unique phase transition and ambipolar behavior as well as thickness‐dependent bandgap. The phase transition and electrical breakdown of various thickness MoTe2 field‐effect transistors observed under high electric fields are addressed. Interestingly, the MoTe2 exhibits phase transition from a semiconducting 2H phase to a metallic 1T′ almost simultaneously with electrical breakdown, and this is confirmed by a Raman peak of 1T′‐MoTe2 at 125 cm−1. Using Raman mapping results of MoTe2 FETs obtained after the breakdown, it is revealed that the phase transition is initiated from the metal contacting electrode regions of source and drain. All the Raman peaks of MoTe2 shifted to low frequency with increasing drain voltage. Based on the Raman peak shifts, the temperature change in the MoTe2 FETs while device operation is in progress is estimated. The maximum temperature and dissipated power of a tri‐layer MoTe2 device are found to reach 495 K and 5.85 mW, respectively, at an electric field of 6.5 V µm−1. This research provides guidelines for circuit design toward the application of 2D semiconductor devices, related to the energy dissipation and electrical breakdown unique to 2D phase transitional materials.

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Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

Cited by 320 publications

References 24 publications

2D Layered Materials for Memristive and Neuromorphic Applications

2D Layered Materials for Memristive and Neuromorphic Applications

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe₂

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Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

Cited by 320 publications

References 24 publications

2D Layered Materials for Memristive and Neuromorphic Applications

2D Layered Materials for Memristive and Neuromorphic Applications

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2

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High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe₂