Electric-field-induced Mott transition in an organic molecular crystal

Kawasugi, Yoshitaka; Yamamoto, Hiroshi; Tajima, Naoya; Fukunaga, Tomohiro; Tsukagoshi, Kazuhito; Kato, Reìzo

doi:10.1103/physrevb.84.125129

Cited by 29 publications

(28 citation statements)

References 38 publications

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“…The EDLT devices were completed by mounting an ion gel (or ionic liquid) on the Hallbar-shaped thin single crystal of κ-Cl and a Au side gate electrode. The basic techniques, such as the electrochemical synthesis of thin single crystals and the laser shaping, are common to our previous FET devices [12]. As gate electrolytes, we employed poly(vinylidene Fig.…”

Section: Discussionmentioning

confidence: 99%

“…Although it is difficult to experimentally determine the distribution of field-induced charge along the out-of-plane direction, we consider that the field-induced carriers predominantly exist in a single conducting molecular sheet [12]. Recently, the quantum oscillations in the doped surface of the Dirac fermion system α-(BEDT-TTF) 2 I 3 [22] indicated that only two conducting layers from the surface were doped, in which the carrier density in the second layer was only 1/7 of that in the first layer.…”

Section: Discussionmentioning

confidence: 99%

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Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

et al. 2016

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It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron–hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

et al. 2016

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“…For Mott-FET fabricated with κ-type single crystal κ-(BEDT-TTF) 2 Cu-[N(CN) 2 ]Cl, mobility over 200 cm 2 V ¹1 s ¹1 was achieved, while metallic conduction was observed only at low temperature because of "the contribution from the undoped bulk channel". 5,6 In this case, the Mott gap is even smaller than the previous cases, and thus Mott insulator crystal with hundreds of nanometers thickness could not offer a high resistance like a normal organic band insulator with large HOMO-LUMO gap. Indeed, the transport carriers are accumulated only in the first few layers in FET operation, 7 while most of the layers without carrier accumulation still remain in Mott insulating state.…”

Section: Introductionmentioning

confidence: 91%

Fabrication and Operation of Monolayer Mott FET at Room Temperature

Yang

Suda

Yamamoto

2017

Bulletin of the Chemical Society of Japan

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Self-assembled monolayer FET based on a TTF derivative is described (FET = field-effect-transistor, TTF = tetrathiafulvalene). The molecule is anchored on an alumina dielectric layer through covalent bonding of a phosphonic acid linker. A p-type monolayer FET device is achieved and subsequent chemical doping of this monolayer with F 4 TCNQ dopants results in an ambipolar device. (F 4 TCNQ = 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane) Several strange behaviors including a gate voltage shift upon doping seem to be consistent with organic monolayer Mott FET. Finally, temperature dependence of the FET performance, which also fit the anticipated Mott FET behavior, is discussed.

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“…Thereby (electric) field-induced organic superconductor doping with hole or electron is obtained when gate voltage is changed in a field-effect-transistor. The electric-field-induced superconductor was observed in the inorganic layer compound MoS 2 [109,110], the (magnetic) field-induced reaction being obtained when the intra-magnetic field inside the crystal from spin-orbital coupling as a π-d interaction was compensated by application of a magnetic field. Irradiation of the crystal under a laser could change the electronic structure of the crystal as an injection of energy, and laserinduced metallic reaction was observed in (EDO-TTF) 2 PF 6 [111].…”

Section: Dual-functional Multifunctional Molecular Crystalsmentioning

confidence: 97%