Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

Abstract

It is widely recognized that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high Tc cuprates. The doping effect, including the electron–hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface (FS) in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting FS under electron doping.

Doping and temperature evolution of pseudogap and spin-spin correlations in the two-dimensional Hubbard model

“…Whereas CPT has been extensively used to study doping dependent electronic structure of models of strong electronic correlations at zero temperature 28,29,46,[51][52][53][54][55][56][57][58] and applied several times at finite temperatures 59,60 , to our knowledge there exists no detailed investigation of the temperature dependence of the pseudogap within CPT. Although CPT is not a self-consistent method (contrary to VCA or CDMFT) and thus cannot be used by itself to study ordered phases, since the pseudogap is a normal state phenomenon, CPT is fully applicable in our case.…”

Transition of a pristine Mott insulator to a correlated Fermi liquid: Pressure-dependent optical investigations of a quantum spin liquid

“…Beside investigations of the thermal expansion, we suggest more detailed studies of the Fermi surface of β ′ -EtMe 3 Sb[Pd(dmit) 2 ] 2 for high pressure and low temperature where the Mott phase transition is crossed and the system turns from an insulator to a metal. Hall measurements indicate an electron-hole doping asymmetry in the antiferromagnetic Mott insulator κ-(BEDT-TTF) 2 Cu[N(CN) 2 ]Cl 35 . Recent Hall studies on the κ-salt spin-liquid Mott insulators κ-(BEDT-TTF) 2 X yield evidence for Mott-Anderson localization 36 .…”

Mechanism of superconductivity and electron-hole doping asymmetry in κ-type molecular conductors

“…1b. Around this hole density, anomalous behavior such as pseudogap phenomena is naively expected 46 . In clear contrast, the FS departs from the M-X line for electron doping, consistent with the tendency of the DAF order being rapidly suppressed for n hole < 1/2.…”