2017
DOI: 10.1246/bcsj.20170233
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Fabrication and Operation of Monolayer Mott FET at Room Temperature

Abstract: Self-assembled monolayer FET based on a TTF derivative is described (FET = field-effect-transistor, TTF = tetrathiafulvalene). The molecule is anchored on an alumina dielectric layer through covalent bonding of a phosphonic acid linker. A p-type monolayer FET device is achieved and subsequent chemical doping of this monolayer with F 4 TCNQ dopants results in an ambipolar device. (F 4 TCNQ = 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane) Several strange behaviors including a gate voltage shift upon dopin… Show more

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Cited by 12 publications
(2 citation statements)
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“…Nanoarchitectonics of monolayer-type Mott field effect transistor (FET) at room temperature was demonstrated by Yamamoto and co-workers [226]. In their attempt, SAM of tetrathiafulvalene was prepared on a FET structure through anchoring on an alumina dielectric layer, where the molecule is anchored through covalent bonding of a phosphonic acid linker.…”
Section: Surface Nanostructures (Sam Etc)mentioning
confidence: 99%
“…Nanoarchitectonics of monolayer-type Mott field effect transistor (FET) at room temperature was demonstrated by Yamamoto and co-workers [226]. In their attempt, SAM of tetrathiafulvalene was prepared on a FET structure through anchoring on an alumina dielectric layer, where the molecule is anchored through covalent bonding of a phosphonic acid linker.…”
Section: Surface Nanostructures (Sam Etc)mentioning
confidence: 99%
“…To address these issues, we are now developing a new type of Mott-FET based on SAM technology. 28) On the other hand, a study of fundamental physics underlying the strongly correlated electrons can be performed using the present devices. Our measurements will provide much information that can be compared with the theoretical calculations.…”
Section: Discussionmentioning
confidence: 99%