Electric, dielectric and optical properties of Ga2O3 grown by metal organic chemical vapour deposition

Growth of metal‐organic decomposed ternary Ga x Ce y O z films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor

“…The excessive diffusion of oxygen and/or OH À ions into Ga x Ce y O z thin film at 1000 C could be further supported by the cross-sectional FESEM image revealing that a considerable increment in total oxide thickness when compared with Ga x Ce y O z thin films wet oxidised from 400 C to 800 C. This implied that the utilization of 1000 C has triggered the oxygen and/or OH À ions to gain sufficient energy causing the disruption of the nitrogen diffusion barrier layer accumulated at the interface between Ga x Ce y O z thin films and Si and thus, these negatively charged nitrogen ions might have diffused outwards to be located further away from the interface that would compensate the positively charged oxygen vacancies. Moreover, the decrease in Q eff at 1000 C could be also caused by the compensation of positive charges 33 by the formation of more Ga x Ce y O z phases verified by GIXRD results, in which previous work stated that doping of Ga in CeO 2 would lower the net oxide charge and this could be due to the Ga 3+ dissociation, leaving behind Ga interstitials in the oxide. Hence, a lower positive Q eff was attained by Ga x Ce y O z thin film wet oxidised at 1000 C than 800 C. Besides the beneficial effect of impeding the formation of the interfacial layer through the formation of nitrogen diffusion barrier layer, the accumulation of nitrogen ions at the interface would also alter the Ga x Ce y O z -Si interface quality and thus, Terman's method has been adapted for the calculation of interface trap density (D it ) of the samples 44 : where ΔV g = V g ÀV g(ideal) is the voltage shift between the experimental and the ideal curves, V g is the experimental gate voltage, and Φ s is the surface potential of Si at a specific gate voltage.…”

“…20 Besides, the introduction of Ga 3+ to CeO 2 lattice would generate negative oxide charges, which would thus compensate for effective positive oxide charges commonly present in high k oxides. 33 Nonetheless, the details were not specified and the relevant investigation on employing Ga 3+ doped CeO 2 to passivate MOS devices is not present.…”

Non-Absorbing Dielectric Materials for Surface-Enhanced Spectroscopies and Chiral Sensing in the UV

“…For each material, we obtained from the Refs. [ 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 ] the energy for which the imaginary part of the complex dielectric function, , exceeds the value of 0.5. For example, the amplitude of a plane wave propagating through a dielectric media with and decays a factor for path-lengths roughly exceeding the wavelength.…”

“…Materials with HRI, , moderate (MRI), , and low refractive index (LRI), are considered and compared. NFE and OCD calculations, based on Mie theory [ 48 , 49 ], are done for all the materials proposed [ 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 ]. To the best of our knowledge, these materials have not been proposed yet as promising UV nano-alternative for surface enhanced spectroscopy.…”

Corona Discharge Assisted Growth Morphology Switching of Tin-Doped Gallium Oxide for Optical Gas Sensing Applications

“…As an example, the conductivity and the band gap of nanowires (NWs) change with their diameter. , Therefore, much research has been put into the Ga 2 O 3 phase selection and morphology control. − Several synthesis methods are available for Ga 2 O 3 . They include chemical vapor deposition (CVD) and molecular beam epitaxy and plasma-assisted deposition methods, ,,,− to name a few. Unlike these methods, a corona discharge assisted CVD process to tailor the growth morphology of Ga 2 O 3 and the physical properties for sensing applications has not yet been reported.…”