Efficient solar cells based on fine-grained polysilicon

Carnel, L.; Gordon, Ivan; Gestel, Dries Van; Beaucarne, G.; Poortmans, Jef

doi:10.1016/j.tsf.2007.12.071

Cited by 13 publications

(6 citation statements)

References 3 publications

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“…Therefore, in the past a lot of technologies were developed to fabricate high-quality c-Si thin films [3], such as solid phase crystallization (SPC) [4], seed layer approach (i.e. metal induced crystallization (ALILE) [5]) or direct crystalline epitaxial growth [6]. However, these technologies suffered from a high defect density in the bulk, limiting the achievable open circuit voltage (Voc) to 560 mV [7].…”

Section: Introductionmentioning

confidence: 99%

Potential of interdigitated back-contact silicon heterojunction solar cells for liquid phase crystallized silicon on glass with efficiency above 14%

Trinh

Preissler

Sonntag

et al. 2018

Solar Energy Materials and Solar Cells

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Liquid phase crystallization of silicon (LPC-Si) on glass is a promising method to produce high quality multi-crystalline Si films with macroscopic grains. In this study, we report on recent improvements of our interdigitated back-contact silicon heterojunction contact system (IBC-SHJ), which enabled open circuit voltages as high as 661 mV and efficiencies up to 14.2% using a 13 µm thin n-type LPC-Si absorbers on glass. The influence of the BSF width on the cell performance is investigated both experimentally and numerically. We combine 1D optical simulations using GenPro4 and 2D electrical simulations using Sentaurus™ TCAD to determine the optical and electrical loss mechanisms in order to estimate the potential of our current LPC-Si absorbers. The simulations reveal an effective minority carrier diffusion length of 26 µm and further demonstrate that a doping concentration of 4×10 16 cm-3 and a back surface field width of 60 µm are optimum values to further increase cell efficiencies.

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Section: Introductionmentioning

confidence: 99%

Potential of interdigitated back-contact silicon heterojunction solar cells for liquid phase crystallized silicon on glass with efficiency above 14%

Trinh

Preissler

Sonntag

et al. 2018

Solar Energy Materials and Solar Cells

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“…Depending by the technology, there is some minimum required thickness for the device in order to guarantee complete absorption of the incoming light, but usually that thickness is of the order of several microns. These technologies were proposed, for example, by IMEC , Fraunhofer‐ ISE , and Solexel .…”

Section: Introductionmentioning

confidence: 99%

Preliminary design of a novel high throughput CVD reactor for photovoltaic applications

Masi

Cavallotti

Boccalari

et al. 2014

Crystal Research and Technology

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The computational design of a high throughput chemical vapor deposition (CVD) reactor to deposit silicon films is here presented. The reactor is characterized by a multichannel hot wall structure, atmospheric operation, and an alternated feeding of reactants from the two reactor sides to ensure the maximum consumption of precursors while keeping an acceptable film thickness uniformity. Particular care was ensured in developing an inlet/exhaust design to uniformly distribute/exhaust the reactants and byproducts through the different channels of the reactor.

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“…Polycrystalline Si, or poly-Si, has many applications in the field of microelectronic devices, from conventional fieldeffect transistors, 1 to heterojunction bipolar transistors, 2 and photovoltaics. 3 Due to the ever-shrinking feature sizes in transistors, innovations in annealing beyond conventional rapid thermal processing are necessary to limit diffusion and increase activation of dopants. 4 In particular, flash annealing allows low thermal budgets with high temperatures and very short time scales on the order of 1 ms. 5 The combination of high B concentration with low thermal budgets presents an ideal environment for investigating B segregation to the grain boundaries in poly-Si.…”

Section: Introductionmentioning

confidence: 99%

B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing

Jin

Jones

Law

et al. 2012

Journal of Applied Physics

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Three-dimensional atom probe tomography was used to characterize the segregation of B dopant atoms to grain boundaries in polycrystalline Si after flash-assisted rapid thermal annealing. Tomographic reconstructions allowed direct measurement of segregation coefficients, which were found to be greater at lower flash temperatures with thermal budgets that limit grain growth. Hall measurements confirmed the deactivation of B at the grain boundaries, while secondary ion mass spectrometry was used to measure B diffusion in the film. Experimental parameters were then simulated in a diffusion model which accurately predicts the diffusion of B in polycrystalline Si at flash temperatures of 1150 C, 1250 C, and 1350 C, as well as with conventional rapid thermal annealing. V

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Efficient solar cells based on fine-grained polysilicon

Cited by 13 publications

References 3 publications

Potential of interdigitated back-contact silicon heterojunction solar cells for liquid phase crystallized silicon on glass with efficiency above 14%

Potential of interdigitated back-contact silicon heterojunction solar cells for liquid phase crystallized silicon on glass with efficiency above 14%

Preliminary design of a novel high throughput CVD reactor for photovoltaic applications

B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing

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