The computational design of a high throughput chemical vapor deposition (CVD) reactor to deposit silicon films is here presented. The reactor is characterized by a multichannel hot wall structure, atmospheric operation, and an alternated feeding of reactants from the two reactor sides to ensure the maximum consumption of precursors while keeping an acceptable film thickness uniformity. Particular care was ensured in developing an inlet/exhaust design to uniformly distribute/exhaust the reactants and byproducts through the different channels of the reactor.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.