Preliminary design of a novel high throughput CVD reactor for photovoltaic applications

Masi, Maurizio; Cavallotti, Carlo; Boccalari, Diego; Castellana, Francesco

doi:10.1002/crat.201300391

Cited by 5 publications

(3 citation statements)

References 17 publications

(18 reference statements)

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“…Beyond semiconductors, CVD is widely used in the production of photovoltaic cells [5], where thin films of materials like silicon, cadmium telluride, and copper indium gallium selenide are deposited to create efficient solar cells. In optics, CVD is used to deposit antireflective coatings, optical filters, and waveguides [6].…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Łach,

Svyetlichnyy

2024

Preprint

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Chemical vapor deposition (CVD) is a vital process for depositing thin films of various materials with precise control over thickness, composition, and properties. Understanding the heat and mass transfer mechanisms during CVD is essential for optimizing process parameters and ensuring high-quality film deposition. This review provides an overview of recent advancements in the heat and mass transfer modeling for chemical vapor deposition processes. It explores innovative modeling techniques, recent research findings, emerging applications, and challenges in the field. Additionally, it discusses future directions and potential areas for further advancement in CVD modeling.

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Section: Introductionmentioning

confidence: 99%

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Łach,

Svyetlichnyy

2024

Preprint

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“…Design and optimization based solely on an empirical evaluation of experimental data would be a costly and ineffective approach. Compared to experimental studies, computational modeling and simulations provide a feasible solution to this task [23,24] and pave the way towards a system-level optimization.…”

Section: Introductionmentioning

confidence: 99%

Simulation and analysis of III–V heterostructure solar cells for a continuous HVPE process

Yao¹,

Rawlings²,

Kuech³

2020

Semicond. Sci. Technol.

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A continuous hydride vapor phase epitaxy (HVPE) growth system has the potential to realize large-scale production of low-cost III–V solar cells. To aid the process development, this work integrates HVPE reactor model with III–V solar cell simulation to intimately tie the device performance to the process design and operation. This modeling approach sets a potential to connect the control of a growth system directly to the device performance without intervening ancillary models. The approach of direct process-to-device level simulation is demonstrated through simulating the continuous HVPE fabrication of a model solar cell structure as a function of critical process parameter. Critical reactor design features as well as sensitive material parameters in affecting device performance are discussed. An illustrative case study is carried out to investigate the influence of gas curtain velocity on the solar cell efficiency using the integration of reactor and solar cell models. Through the correlations determined by the process-to-device simulations, the sensitivity of critical reactor variables in affecting cell efficiency can be established and optimized through the impact on solar cell performance directly. This integrated device performance–reactor design approach allows for the design of the process and its real-time control with direct knowledge of the expected dependence of device performance on reactor design trade-offs.

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“…Simulations are performed using a two-dimensional (2D) axisymmetric flow and in three dimensions to account for buoyancy effects. In most of the works, the objective of design optimisation is related to the temperature field uniformity on the substrate where the film is grown (Choi and Kim, 2014; Danielsson et al , 2002; Choo et al , 2005) or, as in the case of multichannel structures, to the flow repartition and thickness uniformity of the epitaxial film (Masi et al , 2014).…”

Section: Introductionmentioning

confidence: 99%

Reduced order modelling for efficient numerical optimisation of a hot-wall chemical vapour deposition reactor

Borzacchiello

Aguado

Chinesta

2017

HFF

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This paper presents a reduced order computational strategy for multiphysics simulation involving fluid flow, electrodynamics and heat transfer in a hot-wall Chemical Vapour Deposition (CVD) reactor. The main goal is to produce a multi-parametric solution for fast exploration of the design space in order to perform numerical prototyping and process optimisation. Different reduced order techniques are applied. In particular the Proper Generalized Decomposition (PGD) is used to solve the parametrised heat transfer equation in a five-dimensional space. The solution is provided in a compact separated-variable format allowing a fast evaluation of the process-specific quantities of interest that are involved in the optimisation algorithm.

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Preliminary design of a novel high throughput CVD reactor for photovoltaic applications

Cited by 5 publications

References 17 publications

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Simulation and analysis of III–V heterostructure solar cells for a continuous HVPE process

Reduced order modelling for efficient numerical optimisation of a hot-wall chemical vapour deposition reactor

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