2020
DOI: 10.1016/j.mtchem.2020.100321
|View full text |Cite
|
Sign up to set email alerts
|

Efficient hole transport material formed by atmospheric pressure plasma functionalization of Spiro-OMeTAD

Abstract: A technique to increase the conductivity of Spiro-OMeTAD using an easily scalable, nonthermal atmospheric pressure plasma jet (APPJ) is reported. An investigation of plasma functionalization demonstrated an enhancement in hole conductivity by over an order of magnitude from 9.4 × 10-7 S cm-1 for the pristine film to 1.15 × 10-5 S cm-1 for films after 5 minutes of plasma treatment. The conductivity value after plasma functionalization was comparable to that reported for 10 -25% Li-TFSI-doped Spiro-OMeTAD. The i… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
4
0

Year Published

2021
2021
2022
2022

Publication Types

Select...
4
1

Relationship

2
3

Authors

Journals

citations
Cited by 6 publications
(4 citation statements)
references
References 98 publications
(82 reference statements)
0
4
0
Order By: Relevance
“…It is known from the literature that the generation of spiro-OMeTAD + can serve as an indicator that HTMs effectively promote hole mobility at the material interface; the increase in the spiro-OMeTAD + can induce the Fermi energy level to the HOMO level due to increased hole carrier concentration, , which is consistent with the UPS results measured above. And its absorption peak is generally around 400 and 520 nm, but the 400 nm peak is easily mixed with the 395 nm peak of the nonoxidized state spiro-OMeTAD . To be clearly comparable, normalization of the obtained data was achieved, as shown in Figure d, where the inset shows the magnification of the absorption spectra in the range of 450–600 nm, and the highest board absorption band was found in 0.6RbI:spiro around 520 nm, suggesting the formation of oxidized spiro-OMeTAD cation radical.…”
Section: Resultsmentioning
confidence: 99%
“…It is known from the literature that the generation of spiro-OMeTAD + can serve as an indicator that HTMs effectively promote hole mobility at the material interface; the increase in the spiro-OMeTAD + can induce the Fermi energy level to the HOMO level due to increased hole carrier concentration, , which is consistent with the UPS results measured above. And its absorption peak is generally around 400 and 520 nm, but the 400 nm peak is easily mixed with the 395 nm peak of the nonoxidized state spiro-OMeTAD . To be clearly comparable, normalization of the obtained data was achieved, as shown in Figure d, where the inset shows the magnification of the absorption spectra in the range of 450–600 nm, and the highest board absorption band was found in 0.6RbI:spiro around 520 nm, suggesting the formation of oxidized spiro-OMeTAD cation radical.…”
Section: Resultsmentioning
confidence: 99%
“…Theultrahigh Youngsmodulus of organic Spiro-O8-Li film is also verified by the AFM test of Spiro-O8-Li film on conductive glass (Figure S13), which may be attributed to its relatively symmetrical chemical structure,h igh glass transition temperature,molecular rigidity without any alkyl chains, as well as favorable intermolecular interaction in film. [22] After immersed in electrolyte,Spiro-O8-Li@Li still maintains av ery uniform and smooth surface with an average surface roughness of 8.9 nm (Figure S14). Thei ncreased surface roughness is caused by the formation of LiF film upon exposed to the electrolyte.M eanwhile,t he Youngsm odulus mapping values of Spiro-O8-Li@Li are jumped to 6.2 GPa after ar eaction between Spiro-O8-Li and the electrolyte (Figure 4b), which is very close to the Youngsm odulus of electrolyte-derived LiF films in previous works.…”
Section: Methodsmentioning
confidence: 99%
“…The carbon layer plays an important role in water resistance. Moreover, doping and functionalization using atmospheric pressure plasma has been recently exploited to increase the hole conductivity of Spiro-OMeTAD without the necessity of additional chemical dopants (Ghosh et al, 2020).…”
Section: Materials Challengesmentioning
confidence: 99%