In recent years, perovskite materials have been widely used in optoelectronic components due to a series of advantages such as a high light absorption coefficient, high carrier mobility, long carrier diffusion length, shallow defect level, and high crystallinity. The photodetector is an important photoelectric device that can convert light radiation signals into electrical signals, so it has significant applications and scientific research value in military, civil, and other fields. Semiconductor materials are an essential part of photodetectors. So far, many semiconductor materials have been used in photodetectors, including silicon, carbon nanotubes, III−V compounds, and quantum dots, and remarkable progress has been made in improving the light detection performance and device structure design. However, photodetectors based on these materials usually require expensive materials, rigorous processes, and complex manufacturing conditions, which hinder their commercial application. Optoelectronic devices based on perovskite materials have the advantages of a simple fabrication process, low cost, and high performance, making them widely considered in optoelectronic applications. This review focuses on the preparation and photoelectric performance of the perovskite photodetector and the effect of noise on the performance of the perovskite detector and how to reduce the detector's noise to increase the detection rate. In this review, we mainly discuss the following four aspects of work. First, we discuss the various noises of perovskite photodetectors. Then, we explore ways to reduce the noise of perovskite detectors with different structures (photoconductor, photodiode, and phototransistor). We explore corresponding improvement methods for different device structure detectors to reduce noise and improve the detection performance. Next, we discuss the different synthesis methods of all-inorganic perovskites, including solution processing synthesis, vapor-assisted solution synthesis, and chemical vapor deposition. Finally, current challenges of perovskite photodetectors (toxicity, stability, flexibility, and self-powered) are summarized and prospected.

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Nickel oxide (NiO x ), a typical p-type semiconductor, is emerging as the most promising hole transport layer material. However, the inferior interfacial contact of the NiO x /perovskite interface has limited the improvement of the performance of photodetectors (PDs). In this work, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) is introduced to modify the NiO x /perovskite interface to prepare high-performance PDs. This study shows that the F4-TCNQ layer interacts with the NiO x /perovskite layers. It can increase the Ni3+/Ni2+ ratio and then enhance the hole extraction and charge carrier mobility; on the contrary, it can form a new Lewis adduct and passivate the undercoordinated Pb2+ ions. Furthermore, with the F4-TCNQ modification, the perovskite film exhibits good thermal stability and photostability. The PDs demonstrate excellent photoelectric properties and long-term stability in the atmosphere. This finding provides a simple and efficient way to further develop the NiO x /perovskite interface.

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2,2′,7,7′-Tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene (spiro-OMeTAD) is one of the broadly used hole transport materials for high-performance perovskite photodetectors. However, to achieve high hole mobility and conductivity, it often requires the addition of additives and dopants with hygroscopic properties similar to bis­(trifluoromethane)­sulfonamide lithium salt (Li-TFSI) and 4-tert-butylpyridine (TBP), which are forced to undergo aggregation and hydrolysis under environmental conditions, hence leading to pinholes/voids in resultant films. In this work, we added rubidium iodide (RbI) to spiro-OMeTAD together with Li-TFSI and TBP, and the complexation between RbI and TBP prevented the evaporation of TBP that hinders the aggregation of Li-TFSI and reduces the undesired voids. Consequently, RbI-doped spiro-OMeTAD serves as the hole transport layer (HTL) for perovskite photodetectors, enhancing the conductivity and hole transport abilities of the hole transport layer, which also helps to promote energy-level matching with the perovskite layer. The performance of the perovskite photodetector is verified by analyzing the current density–voltage characteristics as well as the transient and dynamic photocurrent response characteristics. Devices with RbI-doped HTLs exhibit a champion specific detectivity approaching 3.77 × 1013 Jones and a linear dynamic range of 114 dB. This work provides a feasible approach to improve the stability of small-molecule-based hole transport materials for perovskite photodetectors.