Efficiency and noise measurements of non-uniformly irradiated double-sided silicon strip detectors

Dubbs, T.; Kashigin, S.; Kratzer, Markus; Kroeger, W.; Pulliam, T.; Sadrozinski, H. F-W.; Schwab, M. J.; Spencer, E.; Wichmann, Romy; Wilder, M.; Unno, Y.; Ohsugi, T.

doi:10.1016/s0168-9002(96)00749-8

Cited by 17 publications

(2 citation statements)

References 10 publications

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“…The results concerning the sensor performance are not depending on the particular readout ASIC employed. Table 1 indicates that n-side readout devices (n-in-n or n-in-p) -2 - are chosen due to their superior radiation tolerance [5][6][7]. In particular, it shows that for the inner layers both option are possible, while for outer layers and disks the n-in-p diode configuration is preferred.…”

Section: The Pps Projectmentioning

confidence: 99%

Recent achievements of the ATLAS upgrade Planar Pixel Sensors R&D project

Casse

2014

J. Inst.

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The ATLAS upgrade Planar Pixel Sensors (PPS) project aims to prove the suitability of silicon detectors processed with planar technology to equip all layers of the pixel vertex detector proposed for the upgrade of the ATLAS experiment for the future High Luminosity LHC at CERN (HL-LHC). The detectors need to be radiation tolerant to the extreme fluences expected to be received during the experimental lifetime, with optimised geometry for full coverage and high granularity and affordable in term of cost, due to the relatively large area of the upgraded ATLAS detector system. Here several solutions for the detector geometry and results with radiation hard technologies (n-in-n, n-in-p) are discussed.

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Section: The Pps Projectmentioning

confidence: 99%

Recent achievements of the ATLAS upgrade Planar Pixel Sensors R&D project

Casse

2014

J. Inst.

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“…The method uses a 90 Sr telescope as described in Ref. [6]. Figure 6 shows the median pulse height vs. bias.…”

Section: A Comparison Between C-v and C-cmentioning

confidence: 99%

Depletion voltage and charge collection for highly irradiated silicon microstrip detectors with various initial resistivities

Cannara

Dubbs

Hancock

et al. 1999

IEEE Trans. Nucl. Sci.

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We have irradiated p-on-n silicon microstrip detectors of initial bulk resistivity between 0.2 and 2.7 kΩ-cm with 55MeV protons to fluences of 0.8, 2.2 and 11x10 13 p/cm 2 (equivalent to twice the fluence in high energy protons), and have measured the depletion voltage before and after irradiation using C-V methods.In addition, we have measured the charge collection of minimum ionization on a single strip with a fast amplifier as a function of bias voltage. We compare the depletion voltage deduced from both methods for samples with different initial resistivities.

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