Radiation tolerance of oxygenated n-strip read-out detectors

Allport, P. P.; Casse, G.; Greenall, A.

doi:10.1016/j.nima.2003.08.007

Cited by 7 publications

(4 citation statements)

References 22 publications

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“…Released vacancies may also promote the formation of complexes with deeper energy levels (V 2 O, V 2 O 2 ), not detectable in the explored temperature range. The formation of extended defects in irradiated Si at difference fluences (in the range 1·10 13 -3·10 16 cm -2 ) has been studied by Hall and magnetoresistance effects [11] in n-type FZ samples with <111> orientation and ρ=2kΩcm. The specific role of these defects in trapping is currently under investigation.…”

Section: Charge Trapping and Defect Characterizationmentioning

confidence: 99%

“…This choice is more expensive than the standard p-in-n solution, but radiation harder [13]: the higher mobility of electrons compared to holes and the higher electric field on the n + side result in a much shorter collection time and therefore in less trapping of carriers. The extra cost due to double-sided processing can be avoided using the n-in-p design, which will also prevent type inversion.…”

Section: Detectors Made With P-type Siliconmentioning

confidence: 99%

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Recent developments of the CERN RD50 collaboration

Menichelli

2008

Nuclear Instruments and Methods in Physics Research Section A:

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Abstract. The objective of the RD50 collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of the possible upgrade of the large hadron collider (LHC) at CERN. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: i) the progresses in the characterization of lattice defects responsible for carrier trapping; ii) charge collection efficiency of n-in-p microstrip detectors, irradiated with neutrons, as measured with different readout electronics; iii) charge collection efficiency of single-type column 3D detectors, after proton and neutron irradiation, including position-sensitive measurement; iv) simulations of irradiated double-sided and full-3D detectors, as well as the state of their production process.

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Section: Charge Trapping and Defect Characterizationmentioning

confidence: 99%

Section: Detectors Made With P-type Siliconmentioning

confidence: 99%

Recent developments of the CERN RD50 collaboration

Menichelli

2008

Nuclear Instruments and Methods in Physics Research Section A:

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“…During the course of this work, we simulated a 3D funnel shape of the electric potential distribution to determine if electrons funnel into the collection electrode to be collected, even in a radiation environment. However, in our previous work, the silicon bulk we chose was n-type, which may have resulted in space charge sign inversion (SCSI) under heavy radiation, as in high-energy physics (HEP) experiments [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

Liu

Zhou

2020

Micromachines

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In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell with p-type bulk silicon, such as electric potential distribution, electric field distribution, hole concentration distribution, and leakage current to analyze the full detector depletion voltage and other detector properties. To verify the prediction of ultra-fast response times, we simulate the instant induced current curves before and after irradiation with different minimum ionizing particle (MIP) hitting positions. High position resolution pixel detectors can be fabricated by constructing an array of these extremely small detector cells.

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“…Very little or no effect of oxygenation had been observed when irradiated with neutrons [8]. RD48 developments were followed by the RD50 proposals for using naturally oxygen-rich high-resistivity Czochralski silicon (Cz-Si or MCz-Si if grown in a magnetic field) [9], [10] and device engineering in terms of (n on p, or p-type sensor) structure [11], [12], [13]. P-type detectors do not suffer from SCSI and thus the electric field maximum remains on the segmented side of the sensor.…”

mentioning

confidence: 99%

Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates

Härkönen

Kalliopuska

et al. 2014

IEEE Trans. Nucl. Sci.

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Tracking detectors for future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost efficient. This paper describes processing and characterization of (n-type silicon bulk) detectors made of highresistivity Magnetic Czochralski silicon (MCz-Si) substrates with 6-inch wafer diameter. The processing was carried out on a line used for large-scale production of sensors using standard fabrication methods, such as implanting polysilicon resistors to bias individual sensor strips. Special care was taken to avoid the creation of Thermal Donors (TD) during processing. The sensors have a full depletion voltage of 120-150 V which are uniform over the investigated sensors. All of the leakage current densities were below at 200 V bias voltage. A strip sensor with 768 channels was attached to readout electronics and tested in particle beam with a data acquisition (DAQ) similar to the system used by the CMS experiment at the CERN LHC. The test beam results show a signal-to-noise ratio greater than 40 for the test beam sensor. The results demonstrate that MCz-Si detectors can reliably be manufactured in the industrial scale semiconductor process.

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Radiation tolerance of oxygenated n-strip read-out detectors

Cited by 7 publications

References 22 publications

Recent developments of the CERN RD50 collaboration

Recent developments of the CERN RD50 collaboration

Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates

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