Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode AIP Advances 8, 075218 (2018) A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is proposed in this study. In a 3DOSED, the trench electrode can be etched all the way through the detector thickness, totally eliminating the low electric field region existed in the conventional 3D-Trench-Electrode detector. Full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Through comparing of the simulation results of the detector, we can obtain the best design of the 3SOSED. In addition, simulation results show that, as compared to the conventional 3D detector, the proposed 3DOSED can improve not only detector charge collection efficiency but also its radiation hardness with regard to solving the trapping problem in the detector bulk. What is more, it has been shown that detector full depletion voltage is also slightly reduced, which can improve the utility aspects of the detector. When compared to the conventional 3D detector, we find that the proposed novel 3DOSED structure has better electric potential and electric field distributions, and better electrical properties such as detector full depletion voltage. In 3DOSED array, each pixel cell is isolated from each other by highly doped trenches, but also electrically and physically connected with each other through the remaining silicon bulk between broken electrodes.
Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection.
Abstract. 3D detectors with very small electrode spacing can provide ultra-fast detection due to their extremely small charge collection time. Since the detector full depletion voltage and charge collection time are independent to the detector thickness, ultra-fast 3D detectors can be made relatively thick (or not too thin, a200 μm) to ensure a large signal. The results of the 3D simulations and modeling of 3D silicon detectors with very small electrode spacing and relatively large thickness will be shown in this paper. The column spacing LP is in the range of 5 μm to 10 μm. At a bias voltage of only a few volts, the electric field in the detector can be large enough to ensure the carrier saturation drift velocity in most volume of the detector, and the detector charge collection time there can be as short as 10's of ps. In this paper, we will analysis the simulated electrical characteristics of this detector structure through systematic 3D simulations using the Silvaco's TCAD tool. Profiles of detector electric potential and electric field will be presented. We will investigate the region of low electric field (the "slow region") in the detector. We will also exam whether the detector reach the breakdown condition at operation voltages suggested in this work.
Pulsar navigation, to meet the physical needs of detecting pulsed x-ray contour, requires a large-area and high-energy resolution silicon drift detector (SDD). Until recently when we designed and fabricated a 314 mm2 double-sided spiral SDD, SDDs developed worldwide have been relatively small in size with a typical diameter less than 10 mm. The details of the design of our 314 mm2 double-sided spiral SDD had been reported in the literature (Li (2013) Nuclear Instruments and Methods in Physics Research A 730 73–78). Present work involves the analysis of electrical characteristics simulations of a 314 mm2 double-sided spiral SDD. It is essential to study the carriers drift behavior of a 314 mm2 double-sided spiral SDD for the structural design optimization of the detector. Therefore, this paper analyzes the relevant electrical characteristics that can characterize the carriers drift behavior. Firstly, this paper illustrates the electric potential, electric field, and electron concentration of the detector. Then, it also provides an analysis of the transient current by simulated the single event transient (SET) effect. The SILVACO TCAD simulator was used to simulate these electrical characteristics. Based on TCAD simulation, the best drift electric field and optimal electron drift channel in a 314 mm2 double-sided spiral SDD are demonstrated. Moreover, the transient current and charge collection mechanism of the detector is also analyzed. Finally, we also tested the leakage current and capacitance of the detector at room temperature.
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