Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

Liu, Manwen; Zhou, Tao; Li, Zheng

doi:10.3390/mi11070674

Cited by 5 publications

(3 citation statements)

References 28 publications

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“…(13) In previous works, for a wafer depth which is larger than 150 µm, the column radius is set as 5 µm [16,17,22,[24][25][26][27] due to the deep reactive-ion etching technology being made with depth-to-width ratios of over 15:1; the full depletion voltage of a hypothetical sphere-electrode-CJ detector will be larger than that of a 2D-planar-electrode detector for any practical detector thickness ( d > 15r C ∼ = 75 µm). However, one can make the column radius large, say 50 to 100 µm, to still get a full depletion voltage reduction with respect to a 2Dplanar-electrode detector of the same thickness d: r C > d/15.…”

Section: The Hypothetic 'Dream' Sphere-electrode Detectors In Spheric...mentioning

confidence: 99%

“…In this work, we use Silvaco-TCAD simulate software [27][28][29] to carry out the electrical characteristics of the new semispherical shell electrode silicon detector [30]. In order to study the electrical properties of the new semispherical shell electrode silicon detector, we will analyze the potential, electric field distribution, electron concentration, and full depletion voltage of the novel detector.…”

Section: The Approximations Of Hypothetic Sphere-electrode Detectors ...mentioning

confidence: 99%

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Theoretical bases of hypothetical sphere-electrode detectors and practical near-sphere-electrode (semisphere-electrode and near-semisphere-electrode) detectors

Liu¹,

Lu²,

Zheng³

2020

J. Phys. D: Appl. Phys.

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In this work, one-dimensional (1D) modeling and simulations of the electric and weighting fields will be systematically carried out for hypothetical sphere-electrode detectors. Exact 1D solutions are obtained for electric and weighting fields in these detectors. Although it is impossible to realize hypothetical sphere-electrode detectors with current technologies, the theoretical work and results on them are good bases for their offspring—practical semi-sphere-electrodes (semisph-electrode) and near-semisph-electrode detectors. The great reduction in full depletion voltage and small capacitance in semisph-electrode and near-semisph-electrode detectors make them very good for applications in photon sciences (x-ray) and safeguard and homeland security (hard x-ray and gamma-ray). A practical novel structure of the three-dimensional (3D) trench electrode detector, namely a novel semisph-electrode silicon detector has been proposed as a practical example. The novel detector has a semispherical shell electrode created in a cuboidal unit cell. It will overcome the traditional 3D-electrode detector deficiencies in electrical performance such as the asymmetrical electric field distribution. Through a computer-aided design tool, 3D modeling and electrical characteristics, simulation of a semispherical electrode silicon detector has been obtained, such as electric field distributions, electron concentration distribution, and full depletion voltage

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Section: The Hypothetic 'Dream' Sphere-electrode Detectors In Spheric...mentioning

confidence: 99%

Section: The Approximations Of Hypothetic Sphere-electrode Detectors ...mentioning

confidence: 99%

Theoretical bases of hypothetical sphere-electrode detectors and practical near-sphere-electrode (semisphere-electrode and near-semisphere-electrode) detectors

Liu¹,

Lu²,

Zheng³

2020

J. Phys. D: Appl. Phys.

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“…In our previous works about the ultra-fast 3D electrode detectors [30][31][32], we predicted the intrinsical radiation hardness for ultra fast 3D trench electrode detectors due to their very small electrode spacing, ranging from 5 µm to 20 µm, which is much smaller than the trapping distance of free carriers in silicon after radiation of 1 × 10 16 n eq /cm 2 . In this work, we increase radiation fluence further and study the degradation of the detector properties, such as increased leakage current and full depletion voltage with professional software.…”

Section: Introductionmentioning

confidence: 97%

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Liu

Cheng

et al. 2021

Micromachines

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The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 104 ohm·cm) silicon material.

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Design and simulation of silicon detector cells with spiral ring electrode structures

Liu

Zheng

2021

AIP Advances

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Traditional pixel detectors are neatly arranged rectangular or square electrodes that cover almost the entire surface. Large electrode areas lead to high capacitance, and capacitance is the primary factor affecting detector noise. A large noise signal will reduce detector detection performance and the system S/N ratio. We have designed a spiral ring electrode silicon detector cell with n-type silicon bulk and systematically studied its electrical properties, including electric potential distribution, electric field distribution, electron concentration distribution, leakage current, full depletion voltage, and detector capacitance. It has been verified that the spiral ring electrode silicon detector has a smaller capacitance than the traditional detector and a smaller depletion voltage compared with the previously designed structures such as the inner circle broom-shaped structure. At the same time, high position resolution pixel detectors can be made by the array of these detector cells.

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Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

Cited by 5 publications

References 28 publications

Theoretical bases of hypothetical sphere-electrode detectors and practical near-sphere-electrode (semisphere-electrode and near-semisphere-electrode) detectors

Theoretical bases of hypothetical sphere-electrode detectors and practical near-sphere-electrode (semisphere-electrode and near-semisphere-electrode) detectors

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Design and simulation of silicon detector cells with spiral ring electrode structures

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