Effects of V/III ratio on Si-doping in InGaAs lattice-matched to InP grown by organometallic vapor phase epitaxy

Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

“…The same trend as that in Fig. 2 was observed by other researchers in Si doped GaAs [9][10][11] as well as in lightly Si doped InGaAs grown at a temperature higher than we used [5]. From the SIMS result, we found out that the increase in the carrier concentration should be a result of the increase in Si incorporation, which confirm the conclusion of Yoo et al [5].…”

“…In lightly and moderately Si doped materials, N Si is approximately equal to the carrier concentration n. But in heavily Si doped materials, due to the amphoteric behavior of Si [10], Si doping is more compensated, and N Si would be greater than n. From Fig. 2, c is found to be about À0.6770.09, greater than that obtained by Yoo et al [5]. This will be discussed in Section 3.2.3.…”

“…So, we can assume the decomposition mechanism of SiH 4 in InP and InGaAs to be similar to that in GaAs, and Si to take the same way as that in Eq. (8) [5]. According to Field and Ghandhi, E ads ðT; PÞ increases as the flow rate of AsH 3 increases.…”

“…In the unintentionally doped InGaAs, residual carrier concentration increases almost linearly with the increase of V/III ratio [4]. However, in the lightly doped InGaAs at a doping level of 10 16 -10 17 , an adverse trend is observed that, when the V/III ratio increases from 2.5 to 81, the carrier concentration decreases from 8.2 Â 10 16 to 2.7 Â 10 16 cm À3 [5].…”

“…In another aspect, varying the V/III ratio may be an effective way. The effects of V/III ratio on unintentionally [4] and lightly [5] doped InGaAs have been investigated at growth temperatures of 640 C and 600 C, respectively. In the unintentionally doped InGaAs, residual carrier concentration increases almost linearly with the increase of V/III ratio [4].…”