Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Jiang, Linwen; Lin, Tao; Wei, Xianhua; Wang, G.H; Zhang, G.Z; Zhang, H.B; Ma, Xiaoyu

doi:10.1016/j.jcrysgro.2003.08.013

Cited by 13 publications

(3 citation statements)

References 12 publications

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“…We believe that it is a result of increasing Si incorporation to the alloy causes Ga content in the alloy to decrease. Beyond 60 sccm of AsH 3 flow, the abundancy of AsH 3 in the grown surface of InGaAs alloy inhibits the Si incorporation to the alloy as reported in literature for GaAs which also applies for InGaAs as well [27,28].…”

Section: Torrmentioning

confidence: 65%

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Demir

Altuntaş

Bulut

et al. 2018

Semicond. Sci. Technol.

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We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8×10 19 cm −3 carrier concentration and 1530 cm 2 V −1 s −1 mobility.

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Section: Torrmentioning

confidence: 65%

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Demir

Altuntaş

Bulut

et al. 2018

Semicond. Sci. Technol.

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“…After many years of development, growth of high quality InP and InGaAs epitaxy layers has been achieved by many techniques, such as low pressure metalorganic vapor phase epitaxy, gas source molecular beam epitaxy, solid source molecular beam epitaxy, and metalorganic chemical vapor deposition [4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

InP and InGaAs grown on InP substrate by molecular beam epitaxy

Yu¹,

Gao²,

Wang³

et al. 2022

MATEC Web Conf.

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InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

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“…One important issue in QDs structure is the gain saturation due to the finite number of states [2]. Therefore, many researchers have shown interest to improve the size and density of the dots such as growing QDs on a high index substrate [4] and vicinal substrate [5], growth conditions such as substrate temperature [6], growth rate [7], group III/V ratio [8] and AsH 3 pressure on the growth of InAs or InGaAs QDs [9,10]. However, the performance of the QDs based devices is strongly depends on the size and density of the dots.…”

Section: Introductionmentioning

confidence: 99%

Effect of In[sub x]Ga[sub 1−X]As Underlying Layer and Growth Mode on the Surface Morphology of In[sub 0.5]Ga[sub 0.5]As∕GaAs Quantum Dots

Ismail¹,

Aryanto²,

Othaman³

et al. 2010

AIP Conference Proceedings

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Articles you may be interested inGrowth evolution of laser-ablated Sr 2 FeMoO 6 nanostructured films: Effects of substrateinduced strain on the surface morphology and film quality Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition J.Abstract. Single layer of In 0.5 Ga 0.5 As quantum dots (QDs) was grown using self-assembled Stranski-Krastanow on a thin In x Ga 1-x As underlying layer and on a reference GaAs wafer by metal-organic chemical vapour deposition (MOCVD). The effect of different indium composition in the underlying layer and the duration of arsine (AsH3) flow during cooling-down period of the growth process were investigated and characterized using atomic force microscopy (AFM). The growth of the thin underlying layer has significant influence on the formation of the QDs on the top surface. The dots density increases with increasing indium composition in the underlying layer. AsH 3 flow during the period was found to influence the nucleation process of In 0.5 Ga 0.5 As QDs. A shorter period of AsH 3 flow promotes smaller dots size and therefore increases the dots density.

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Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD

Cited by 13 publications

References 12 publications

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

InP and InGaAs grown on InP substrate by molecular beam epitaxy

Effect of In[sub x]Ga[sub 1−X]As Underlying Layer and Growth Mode on the Surface Morphology of In[sub 0.5]Ga[sub 0.5]As∕GaAs Quantum Dots

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