Effect of In[sub x]Ga[sub 1−X]As Underlying Layer and Growth Mode on the Surface Morphology of In[sub 0.5]Ga[sub 0.5]As∕GaAs Quantum Dots

Abstract

Articles you may be interested inGrowth evolution of laser-ablated Sr 2 FeMoO 6 nanostructured films: Effects of substrateinduced strain on the surface morphology and film quality Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition J.Abstract. Single layer of In 0.5 Ga 0.5 As quantum dots (QDs) was grown using self-assembled Stranski-Krastanow on a thin In x Ga 1-x As underlying layer and on a reference GaAs wafer by metal-organic chemical vapour deposition (MOCVD). The effect of different indium composition in the underlying layer and the duration of arsine (AsH3) flow during cooling-down period of the growth process were investigated and characterized using atomic force microscopy (AFM). The growth of the thin underlying layer has significant influence on the formation of the QDs on the top surface. The dots density increases with increasing indium composition in the underlying layer. AsH 3 flow during the period was found to influence the nucleation process of In 0.5 Ga 0.5 As QDs. A shorter period of AsH 3 flow promotes smaller dots size and therefore increases the dots density.