Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties

Abstract

Template-assisted selective area growth techniques have gained popularity for their ability to grow epitaxial materials in prefabricated dielectric templates. Confined epitaxial lateral overgrowth (CELO) is one such technique that uses dielectric templates to define the geometry of the grown nanostructures. Two terminal low-temperature magneto-transport measurements were used to determine electronic properties. For doped In0.53Ga0.47As CELO nanostructures, we observe Shubnikov–De Hass oscillations in the longitudinal magnetoresistance and utilize these to estimate effective mass, carrier density, and mobilities. This analysis both reveals the presence of defects in these nanostructures and material variabilities between growth runs. Electron beam lithography and contact deposition for transport measurements were enabled by parasitic growth removal. In the future, this approach can enable other material systems to be explored for confined lateral epitaxy, improve material quality, and investigate a variety of quantum transport phenomenon in such nanoscale devices.