Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

Sheu, Jinn-Kong; Su, Yan–Kuin; C., G.; Jou, M. J.; Chang, Chia‐Ming

doi:10.1063/1.121636

Cited by 152 publications

(82 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Note that the as-deposited ITO contact produces slightly rectifying behavior, indicating that the ITO Ohmic contact to n-GaN cannot be easily obtained in spite of high N values of nlayer. Indeed, this result is somewhat different as compared with that of Sheu et al, [12] reported that the asdeposited ITO produced Ohmic contact to n-GaN. The observed different behavior might be attributed to the different ITO deposition condition, i.e., the growth temperature of ITO was as high as 500 ºC, in which high growth temperature is expected to influence the ITO crystallinity, as will be discussed later in details.…”

Section: Introductioncontrasting

confidence: 54%

See 1 more Smart Citation

Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN

Kim¹,

Gil²,

Kim³

2015

Proceedings of the 2nd International Conference on Civil, Materials and Environmental Sciences

View full text Add to dashboard Cite

Abstract-Excellent Schottky characteristics of indium-tinoxide (ITO) contact formed on n-type GaN (n-GaN) were demonstrated. The post-thermal annealing of ITO contact sputtered on n-GaN led to a significant improvement in the Schottky characteristics, particularly pronounced in the air ambient than nitrogen ambient, e.g., the rectification ratio (measured at ± 1.0 V) was increased from 4.9 to 4240 after an optimized post-thermal annealing. Thermionic field emission model applied to the forward current-voltage curves of the ITO/n-GaN Schottky diodes also exhibited that the Schottky barrier height could be as high as 0.93 eV. The observed excellent Schottky characteristics with postthermal annealing are attributed to the improved ITO crystallinity as verified by glancing X-ray diffraction method

show abstract

Section: Introductioncontrasting

confidence: 54%

“…[12,13] This might be due to the lack of possible application of ITO/n-GaN contact system. However, it is worth noting that, if the ITO produces Ohmic contact to n-GaN, ITO can be used as the n-type transparent conductive electrodes of GaN-based LEDs, in which may lead to a enhancement of light extraction efficiency.…”

Section: Introductionmentioning

confidence: 99%

Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN

Kim¹,

Gil²,

Kim³

2015

Proceedings of the 2nd International Conference on Civil, Materials and Environmental Sciences

View full text Add to dashboard Cite

show abstract

“…Work on TCO contacts to GaAs, InP and GaN focused on sputter deposited indium tin oxide (ITO) films. ITO as a contact to both p-type and n-type GaN exhibits non-linear behaviour [6]. However, ITO-contacted GaN-based LEDs showed uniform luminescence, indicating effective current-spreading and hole injection [7].…”

mentioning

confidence: 99%

Electrical Properties and Microstructure of Transparent ZnO Contacts to GaN

Kamińska

Piotrowska

Gołaszewska

et al. 2002

phys. stat. sol. (c)

View full text Add to dashboard Cite

Transparent conducting ZnO contacts to GaN, of light transmittance >70% in the visible spectrum have been prepared by thermal oxidation of vacuum deposited zinc. For low-doped p-GaN the contact exhibits ohmic behaviour (1 Â 10 -2 W cm 2 ); on low-doped n-GaN a Schottky barrier (0.56 eV) is observed. We find the properties of ZnO contact promising for optoelectronic device applications.Introduction There is a consensus in the nitride community, that the lack of reliable p-type doping and p-type contacting procedures is hampering the development of GaNbased optoelectronics. Usually, bilayer Ni/Au [1] or Pt-based metallizations [2,3] are used to fabricate ohmic contacts for LEDs and laser diodes. To achieve optical transparency, metallization of a thickness reduced to 5-10 nm is applied, but at the expense of increased contact resistivity and reduced long-term stability. The growing interest is observed in the use of transparent conducting metal oxides (TCOs) for III-V semiconductors contacting purposes [4]. TCOs electro-optical properties are unique in nature in providing high optical transmittance in the visible range of wavelength as well as excellent electrical conductivity. TCO-based hole-injecting anodes are implemented in the majority of organic LEDs [5]. Work on TCO contacts to GaAs, InP and GaN focused on sputter deposited indium tin oxide (ITO) films. ITO as a contact to both p-type and n-type GaN exhibits non-linear behaviour [6]. However, ITO-contacted GaN-based LEDs showed uniform luminescence, indicating effective current-spreading and hole injection [7].In this paper we report on properties of an alternative TCO contact to GaN, namely zinc oxide. Similarly to GaN, ZnO is a wide direct gap semiconductor of wurtzite structure, with a very small mismatch to GaN lattice. This study is aimed at understanding the relation between the consecutive processing steps and the final optical, electrical and structural contact characteristics. Consequently, special attention is paid to the preparation of damage-and contamination-free GaN surface, prior to ZnO deposition. ZnO was formed by oxidation of vacuum deposited zinc.

show abstract

“…The n-type semiconductors such as indium tin oxide (ITO) (2), indium zinc oxide (3,4), aluminium doped zinc oxide (AZO) and fluorine or antimony doped tin oxide (FTO, ATO) (5) are widely used as transparent conducting substrates. ITO and SnO 2 can be prepared on a glass substrate by chemical vapor deposition (6), sputtering (7), spray pyrolysis (8), electron beam evaporation (9), and oxygen ion beam assisted deposition (10). General requirements for transparent conducting film are low electrical resistivity and high transparency in visible spectral region.…”

Section: Introductionmentioning

confidence: 99%

Effects of Substrates on Dye-Sensitized Solar Cell Performance Using Nanocrystalline TiO₂

Ngamsinlapasathian¹,

Kitiyanan²,

Fujieda³

2006

ECS Trans.

View full text Add to dashboard Cite

The effects of conducting glasses on photovoltatic properties of dye-sensitized solar cells using nanocrystalline TiO 2 were studied. The ITO substrate showed low ability to withstand heat during the sintering process, leading to an increase in sheet resistance. The heat stability of ITO conducting glass was improved by depositing metal oxide such as ATO, AZO, and SnO 2 , on ITO layer. The IPCE spectra of thin MP-TiO 2 cell were higher than that of thick P25 cell in the region between 400-475 nm but lower than that of thick P25 cell in the red region, because the thickness of MP-TiO 2 film was not enough to scatter the light leading to low absorbed spectra in red region. IPCE spectra can be improved by using the cell made from blend MP-TiO 2 with P25. The efficiency of the MP-TiO 2 +P25 cells using ITO/SnO 2 conducting substrate remarkably increased comparing with that of the cells using ITO.

show abstract

Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

Cited by 152 publications

References 20 publications

Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN

Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN

Electrical Properties and Microstructure of Transparent ZnO Contacts to GaN

Effects of Substrates on Dye-Sensitized Solar Cell Performance Using Nanocrystalline TiO₂

Contact Info

Product

Resources

About

Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

Cited by 152 publications

References 20 publications

Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN

Excellent Schottky Characteristics of Indium-tin-oxide Contact to n-type GaN

Electrical Properties and Microstructure of Transparent ZnO Contacts to GaN

Effects of Substrates on Dye-Sensitized Solar Cell Performance Using Nanocrystalline TiO2

Contact Info

Product

Resources

About

Effects of Substrates on Dye-Sensitized Solar Cell Performance Using Nanocrystalline TiO₂