Abstract:Abstract-Excellent Schottky characteristics of indium-tinoxide (ITO) contact formed on n-type GaN (n-GaN) were demonstrated. The post-thermal annealing of ITO contact sputtered on n-GaN led to a significant improvement in the Schottky characteristics, particularly pronounced in the air ambient than nitrogen ambient, e.g., the rectification ratio (measured at ± 1.0 V) was increased from 4.9 to 4240 after an optimized post-thermal annealing. Thermionic field emission model applied to the forward current-voltage … Show more
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