In this work indium tin oxide (ITO) films were prepared using electron beam evaporation to form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was also investigated by annealing the samples at various temperatures. In addition, current–voltage (I–V) measurements were taken to deduce the Schottky barrier heights. Owing to the large series resistance, the Norde method was used to plot the F(V)–V curves and the effective Schottky barrier heights were determined as well. The effective Schottky barrier heights were 0.68, 0.88, 0.94, and 0.95 eV for nonannealed, 400, 500, and 600 °C annealed samples, respectively. Results presented herein indicate that an increase of the barrier heights may be attributed to the formation of an interfacial layer at the ITO/GaN interface after annealing.
Al Ga N ∕ Ga N high electron mobility transistors (HEMTs) with an Ag∕AgCl gate exhibit significant changes in channel conductance upon exposing the gate region to various concentrations of chloride (Cl−) ion. The Ag∕AgCl gate electrode, prepared by potentiostatic anodization, changes electrical potential when it encounters Cl− ions. This gate potential changes lead to a change of surface charge in the gate region of the HEMT, inducing a higher positive charge on the AlGaN surface, and increasing the piezoinduced charge density in the HEMT channel. These anions create an image positive charge on the Ag gate metal for the required neutrality, thus increasing the drain current of the HEMT. The HEMT source-drain current was highly dependent on Cl− ion concentration. The limit of detection achieved was 1×10−8M using a 20×50μm2 gate sensing area.
In this study, the Ni/Au layers prepared by electron beam evaporation and thermal alloying were used to form Ohmic contacts on p-type GaN films. Before thermal alloying, the current–voltage (I–V) characteristic of Ni/Au contact on p-type GaN film shows non-Ohmic behavior. As the alloying temperature increases to 700 °C, the I–V curve shows a characteristic of Ohmic contact. The Schottky barrier height reduction may be attributed to the presence of Ga–Ni and Ga–Au compounds, such as Ga4Ni3, Ga3Ni2, GaAu, and GaAu2, at the metal-semiconductor interface. The diffusing behavior of both Ni and Au have been studied by using Auger electron spectroscopy and Rutherford backscattering spectrometry. In addition, x-ray diffraction measurements indicate that the Ni3N and Ga4Ni3 compounds were formed at the metal-semiconductor interface.
Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm−3. The lowest value for the specific contact resistivity of 6.5×10−5 Ω cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.
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