Effects of Substrates on Dye-Sensitized Solar Cell Performance Using Nanocrystalline TiO₂

Abstract

The effects of conducting glasses on photovoltatic properties of dye-sensitized solar cells using nanocrystalline TiO 2 were studied. The ITO substrate showed low ability to withstand heat during the sintering process, leading to an increase in sheet resistance. The heat stability of ITO conducting glass was improved by depositing metal oxide such as ATO, AZO, and SnO 2 , on ITO layer. The IPCE spectra of thin MP-TiO 2 cell were higher than that of thick P25 cell in the region between 400-475 nm but lower than that of thick P25 cell in the red region, because the thickness of MP-TiO 2 film was not enough to scatter the light leading to low absorbed spectra in red region. IPCE spectra can be improved by using the cell made from blend MP-TiO 2 with P25. The efficiency of the MP-TiO 2 +P25 cells using ITO/SnO 2 conducting substrate remarkably increased comparing with that of the cells using ITO.

Dependence of new environmental nano organic semiconductor nickel-(II)-tetraphenyl-21H,23H-porphyrin films on substrate type for energy storage applications

“…Non-conducting substrates include amorphous substrate (glass), crystalline substrate (quartz) and flexible substrate (mica). Substrate can be used as a thin-film supporter or as a current collector in different energy applications (Ngamsinlapasathian et al 2006;Hasani et al 2019;Kabir et al 2019).…”

Influence of Thermal Annealing Media on Optical and Electrical Properties of FTO, ITO and TiO₂ Films

“…The reasons could be the following: (i) the number of V O of ITO is higher FTO and (ii) The solubility of Sn in In 2 O 3 is better than that of F in SnO 2 . 7) When the films are annealed in argon gas medium, the resistance of the ITO film is still smaller FTO film (9 ³ compared to 14 ³). However, when they are annealed in the low vacuum, the ITO film resistance is higher (19 ³ compared to 15 ³) and almost twice higher if they are annealed in air medium (27 ³ versus 15 ³).…”

“…1,4) The hybrid orbital configuration of F and O is 2s 2 2p 5 and 2s 2 2p 4 , respectively, which indicates that the F atom promotes one electron per one molecule when it replaces O atom and thus acting as an electron donor level which leads to the n-type conduction mechanism. 5,6) In the case of ITO thin films, the Indium Oxide (In 2 O 3 )-based materials are doped with Tin (Sn) to increase conductivity, 7,8) and Sn acts as a cationic dopant replacing Indium (In) to bind with O in the plane. With valence of 3 and 4 for In and Sn, respectively, the replacement forms a donor level near the conduction band.…”

“…With valence of 3 and 4 for In and Sn, respectively, the replacement forms a donor level near the conduction band. 7,8) Both FTO and ITO have high conductivity because of their high carrier concentration generated by the two mechanisms. The first is the replacement of the F atom for the O atom for FTO and the replacement of the In atom by the Sn atom in ITO, resulting in an excess electron.…”

The Effect of FTO Sheet Resistance on the Efficiency of Dye Sensitized Solar Cell

“…Solar cell that used FTO films is DSSC. FTO film is used to collect electrons from the sensitized dye [12]. ‫طةرميان‬ For the preparation of the photoanode, FTO glass substrate with size of (2.5 cm × 2.5 cm) was used.…”